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PDF MA792 Data sheet ( 特性 )

部品番号 MA792
部品説明 Schottky Barrier Diodes (SBD)
メーカ Panasonic
ロゴ Panasonic ロゴ 

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MA792 Datasheet, MA792 PDF,ピン配置, 機能
Schottky Barrier Diodes (SBD)
MA3Z792 (MA792)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
I Features
High-density mounting is possible
IF(AV) = 100 mA rectification is possible
Optimum for high frequency rectification because of its short
reverse recovery time (trr)
Low forward voltage VF and good rectification efficiency
S-Mini type 3-pin package
0.3+–00.1
3
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
5°
Unit: mm
0.15+–00..015
0.9±0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward current
Average forward current
Non-repetitive peak forward-
surge-current *
VR
VRRM
IFM
IF(AV)
IFSM
30
30
300
100
1
V
V
mA
mA
A
Junction temperature
Storage temperature
Tj 125
Tstg 55 to +125
°C
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1 : Anode
2 : N.C.
3 : Cathode
SMini3-F1 Package
Marking Symbol: M3T
Internal Connection
3
12
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
IR VR = 30 V
VF IF = 100 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100
15
0.55
20
2.0
µA
V
pF
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00096AED
1

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