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PDF LSCP10C60 Data sheet ( Hoja de datos )
| Número de pieza | LSCP10C60 | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | ETC | |
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SemiWell Semiconductor
SCP10C60
Silicon Controlled Rectifiers
Symbol
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 10 A )
◆ Low On-State Voltage (1.4V(Typ.)@ ITM)
◆ Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
○
2. Anode
TO-220
123
3. Gate
○
○
1. Cathode
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
Half Sine Wave : TC = 111 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
I2t I2t for Fusing
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Ratings
600
6.4
10
110
60
50
5
0.5
2
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/㎲
W
W
A
V
°C
°C
Aug, 2003. Rev. 3
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
1/5
1 page  
TO-220 Package Dimension
Dim.
mm
Min. Typ.
A 9.7
B 6.3
C 9.0
D 12.8
E 1.2
F 1.7
G 2.5
H 3.0
I 1.25
J 2.4
K 5.0
L 2.2
M 1.25
N 0.45
O 0.6
φ 3.6
SCP10C60
Max.
10.1
6.7
9.47
13.3
1.4
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
Min.
0.382
0.248
0.354
0.504
0.047
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
Inch
Typ.
0.067
0.098
0.142
Max.
0.398
0.264
0.373
0.524
0.055
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
E
B
F
C
A HI
C1.0
G
D
L
1
2
3
J
K
N
φ
M
1. Cathode
2. Anode
3. Gate
O
5/5
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| PDF Descargar | [ Datasheet LSCP10C60.PDF ] | |
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