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K4H1G3238C-TLA0のメーカーはSamsungです、この部品の機能は「128Mb DDR SDRAM」です。 |
部品番号 | K4H1G3238C-TLA0 |
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部品説明 | 128Mb DDR SDRAM | ||
メーカ | Samsung | ||
ロゴ | |||
このページの下部にプレビューとK4H1G3238C-TLA0ダウンロード(pdfファイル)リンクがあります。 Total 53 pages
128Mb DDR SDRAM
DDR SDRAM Specification
Version 1.0
- 1 - REV. 1.0 November. 2. 2000
1 Page 128Mb DDR SDRAM
Revision History(continued)
Version 0.7 (March, 2000)
- Changed 128Mb spec from target to Preliminary version.
- Changed partnames as follows.
from
KM44L32031BT-G(L)Z/Y/0
KM48L16031BT-G(L)Z/Y/0
KM416L8031BT-G(L)Z/Y/0
to
K4H280438B-TC(L)A2/B0/A0
K4H280838B-TC(L)A2/B0/A0
K4H281638B-TC(L)A2/B0/A0
- Changed input cap. spec.
CK/CK
DQ/DQS/DM
CMD/Addr
from
2.5pF ~ 3.5pF
4.0pF ~ 5.5pF
2.5pF ~ 3.5pF
to
2.0pF ~ 3.0pF w/ Delta Cin = 0.25pF
4.0pF ~ 5.0pF w/ Delta Cin = 0.5pF
2.0pF ~ 3.0pF with Delta Cin = 0.5pF
- Changed operating condition.
Vil/Vih(ac)
VIL/VIH(dc)
from
Vref +/- 0.35V
Vref +/- 0.18V
to
Vref +/- 0.31V
Vref +/- 0.15V
- Added Overshoot/Undershoot spec
. Vih(max) = 4.2V, the overshoot voltage duration is ≤ 3ns at VDD.
. Vil(min) =- 1.5V, the overshoot voltage duration is ≤ 3ns at VSS.
- Changed AC parameters as follows.
tDQSQ
tDV
tQH
from
+/- 0.5(PC266), +/- 0.6(PC200)
+/- 0.35tCK
-
tHP
- Added DC spec values.
-
to
+0.5(PC266), +0.6(PC200)
-
tHPmin - 0.75ns(PC266)
tHPmin - 1.0ns(PC200)
tCLmin or tCHmin
Version 0.71 (April, 2000)
- Corrected a typo for tRAS at 133Mhz/CL2.5 from 48ns t0 45ns.
- Corrected a typo in "General Information" table from 64Mx4 to 8Mx16.
Version 0.72(May,2000)
- Changed DC spec item & test condition
Version 0.73(June,2000)
- Added updated DC spec values
- Deleted tDAL in AC parameter
Version 1.0(November,2000)
- Eliminate "preliminary"
Comments
Removed
New Definition
New Definition
- 3 - REV. 1.0 November. 2. 2000
3Pages 128Mb DDR SDRAM
List of tables
Table 1 : Operating frequency and DLL jitter
Table 2. : Column address configurtion
Table 3 : Input/Output function description
Table 4 : Burst address ordering for burst length
Table 5 : Bank selection for precharge by bank address bits
Table 6 : Operating description when new command asserted while
read with auto precharge is issued
Table 7 : Operating description when new command asserted while
write with auto precharge is issued
Table 8 : Command truth table
Table 9-1 : Functional truth table
Table 9-2 : Functional truth table (contiued)
Table 9-3 : Functional truth table (contiued)
Table 9-4 : Functional truth table (contiued)
Table 9-5 : Functional truth table (cotinued)
Table 10 : Absolute maximum raings
Table 11 : DC operating condtion
Table 12 : DC specification
Table 13 : AC operating condition
Table 14 : AC timing parameters and specifications
Table 15 : AC operating test conditions
Table 16 : Input/Output capacitance
Table 17 : Pull down and pull up current values
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- 6 - REV. 1.0 November. 2. 2000
6 Page | |||
ページ | 合計 : 53 ページ | ||
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PDF ダウンロード | [ K4H1G3238C-TLA0 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
K4H1G3238C-TLA0 | 128Mb DDR SDRAM | Samsung |
K4H1G3238C-TLA2 | 128Mb DDR SDRAM | Samsung |