DataSheet.jp

K4H1G3238C-TLA0 の電気的特性と機能

K4H1G3238C-TLA0のメーカーはSamsungです、この部品の機能は「128Mb DDR SDRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 K4H1G3238C-TLA0
部品説明 128Mb DDR SDRAM
メーカ Samsung
ロゴ Samsung ロゴ 




このページの下部にプレビューとK4H1G3238C-TLA0ダウンロード(pdfファイル)リンクがあります。
Total 53 pages

No Preview Available !

K4H1G3238C-TLA0 Datasheet, K4H1G3238C-TLA0 PDF,ピン配置, 機能
128Mb DDR SDRAM
DDR SDRAM Specification
Version 1.0
- 1 - REV. 1.0 November. 2. 2000

1 Page





K4H1G3238C-TLA0 pdf, ピン配列
128Mb DDR SDRAM
Revision History(continued)
Version 0.7 (March, 2000)
- Changed 128Mb spec from target to Preliminary version.
- Changed partnames as follows.
from
KM44L32031BT-G(L)Z/Y/0
KM48L16031BT-G(L)Z/Y/0
KM416L8031BT-G(L)Z/Y/0
to
K4H280438B-TC(L)A2/B0/A0
K4H280838B-TC(L)A2/B0/A0
K4H281638B-TC(L)A2/B0/A0
- Changed input cap. spec.
CK/CK
DQ/DQS/DM
CMD/Addr
from
2.5pF ~ 3.5pF
4.0pF ~ 5.5pF
2.5pF ~ 3.5pF
to
2.0pF ~ 3.0pF w/ Delta Cin = 0.25pF
4.0pF ~ 5.0pF w/ Delta Cin = 0.5pF
2.0pF ~ 3.0pF with Delta Cin = 0.5pF
- Changed operating condition.
Vil/Vih(ac)
VIL/VIH(dc)
from
Vref +/- 0.35V
Vref +/- 0.18V
to
Vref +/- 0.31V
Vref +/- 0.15V
- Added Overshoot/Undershoot spec
. Vih(max) = 4.2V, the overshoot voltage duration is 3ns at VDD.
. Vil(min) =- 1.5V, the overshoot voltage duration is 3ns at VSS.
- Changed AC parameters as follows.
tDQSQ
tDV
tQH
from
+/- 0.5(PC266), +/- 0.6(PC200)
+/- 0.35tCK
-
tHP
- Added DC spec values.
-
to
+0.5(PC266), +0.6(PC200)
-
tHPmin - 0.75ns(PC266)
tHPmin - 1.0ns(PC200)
tCLmin or tCHmin
Version 0.71 (April, 2000)
- Corrected a typo for tRAS at 133Mhz/CL2.5 from 48ns t0 45ns.
- Corrected a typo in "General Information" table from 64Mx4 to 8Mx16.
Version 0.72(May,2000)
- Changed DC spec item & test condition
Version 0.73(June,2000)
- Added updated DC spec values
- Deleted tDAL in AC parameter
Version 1.0(November,2000)
- Eliminate "preliminary"
Comments
Removed
New Definition
New Definition
- 3 - REV. 1.0 November. 2. 2000


3Pages


K4H1G3238C-TLA0 電子部品, 半導体
128Mb DDR SDRAM
List of tables
Table 1 : Operating frequency and DLL jitter
Table 2. : Column address configurtion
Table 3 : Input/Output function description
Table 4 : Burst address ordering for burst length
Table 5 : Bank selection for precharge by bank address bits
Table 6 : Operating description when new command asserted while
read with auto precharge is issued
Table 7 : Operating description when new command asserted while
write with auto precharge is issued
Table 8 : Command truth table
Table 9-1 : Functional truth table
Table 9-2 : Functional truth table (contiued)
Table 9-3 : Functional truth table (contiued)
Table 9-4 : Functional truth table (contiued)
Table 9-5 : Functional truth table (cotinued)
Table 10 : Absolute maximum raings
Table 11 : DC operating condtion
Table 12 : DC specification
Table 13 : AC operating condition
Table 14 : AC timing parameters and specifications
Table 15 : AC operating test conditions
Table 16 : Input/Output capacitance
Table 17 : Pull down and pull up current values
10
11
12
17
19
30
31
34
35
36
37
38
39
40
40
42
42
44
45
45
47
- 6 - REV. 1.0 November. 2. 2000

6 Page



ページ 合計 : 53 ページ
 
PDF
ダウンロード
[ K4H1G3238C-TLA0 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
K4H1G3238C-TLA0

128Mb DDR SDRAM

Samsung
Samsung
K4H1G3238C-TLA2

128Mb DDR SDRAM

Samsung
Samsung


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap