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Datasheet K246 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | k246 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2461
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
FEATURES
|  NEC | mosfet |
| 2 | k246 | N-CHANNEL JUNCTION TYPE Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
2SK246
Unit: mm
· High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Ma |  Toshiba | transistor |
| 3 | k246 | Small switching (60V/ 2A) Transistors
Small switching (60V, 2A)
2SK2463
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm)
FAbsolut |  ROHM Semiconductor | data |
| 4 | k246 | Ultrahigh-Speed Switching Applications Ordering number:ENN6475
N-Channel Silicon MOSFET
2SK2464
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package.
Package |  Sanyo Semicon Device | data |
| 5 | k246 | N-channel MOS-FET 2SK2469-01MR
FAP-II Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
300V
1Ω
5A
30W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpos |  Fuji | mosfet |
k24 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K240 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0  Knox Inc diode | | |
| 2 | K2400E70 | silicon bilateral voltage triggered switch DO-15X Axial Lead
DO-214AA Surface Mount
TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected
SIDAC
(95 - 330 Volts)
9
General Description
The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac  Teccor data | | |
| 3 | K2400F1 | silicon bilateral voltage triggered switch DO-15X Axial Lead
DO-214AA Surface Mount
TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected
SIDAC
(95 - 330 Volts)
9
General Description
The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac Teccor data | | |
| 4 | K2400G | silicon bilateral voltage triggered switch DO-15X Axial Lead
DO-214AA Surface Mount
TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected
SIDAC
(95 - 330 Volts)
9
General Description
The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac Teccor data | | |
| 5 | K2400S | silicon bilateral voltage triggered switch DO-15X Axial Lead
DO-214AA Surface Mount
TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected
SIDAC
(95 - 330 Volts)
9
General Description
The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac Teccor data | | |
| 6 | K2401 | N-Channel MOSFET, 2SK2401 2SK2401
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2401
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance
: RDS (ON) = 0.13 Ω (typ.)
z High forward transfer admittance : |Yfs| = 17 S (typ.)
z Low leakage current  Toshiba Semiconductor data | | |
| 7 | K2401F1 | silicon bilateral voltage triggered switch DO-15X Axial Lead
DO-214AA Surface Mount
TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected
SIDAC
(95 - 330 Volts)
9
General Description
The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac Teccor data | |
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