DataSheet.jp

k246 の電気的特性と機能

k246のメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 k246
部品説明 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




このページの下部にプレビューとk246ダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

k246 Datasheet, k246 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2461
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2461 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
Low On-Resistance
RDS(on)1 = 80 mMAX. (@ VGS = 10 V, ID = 10 A)
RDS(on)2 = 0.1 MAX. (@ VGS = 4 V, ID = 10 A)
Low Ciss Ciss = 1400 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
100 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±20 A
Drain Current (pulse)*
ID(pulse)
±80 A
Total Power Dissipation (Tc = 25 ˚C) PT1
35 W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
20 A
Single Avalanche Energy**
EAS
40 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
123
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
Document No. TC-2529
(O. D. No. TC-8078)
Date Published April 1995 P
Printed in Japan
© 1995

1 Page





k246 pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100 R(DaSt(oVn)GLSim= i1te0IdDV)(DC)
ID(pulse)
100
s
1 ms
10
1
Power DissipatDioC2n0L0im1m0istmeds
PW=10
s
TC = 25 ˚C
0.1 Single Pulse
1 10
100 1000
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
100
10 TA = –25 ˚C
25 ˚C
125 ˚C
1
VDS = 10 V
0 5 10 15
VGS - Gate to Source Voltage - V
2SK2461
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
VGS = 10 V
40
Pulsed
VGS = 6 V
30
VGS = 4 V
20
10
0 2 468
VDS - Drain to Source Voltage - V
3


3Pages


k246 電子部品, 半導体
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
IAS = 20 A
10
EAS = 40 mJ
1.0
VDD = 50 V
VGS = 20 V 0
RG = 25
10 µ 100 µ
1m
L - Inductive Load - H
10 m
2SK2461
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
VDD = 50 V
140 RG = 25
VGS = 20 V 0
120 IAS 20 A
100
80
60
40
20
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
6

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ k246 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
K240

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE

Knox  Inc
Knox Inc
K2400E70

silicon bilateral voltage triggered switch

Teccor
Teccor
K2400F1

silicon bilateral voltage triggered switch

Teccor
Teccor
K2400G

silicon bilateral voltage triggered switch

Teccor
Teccor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap