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k246のメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE」です。 |
部品番号 | k246 |
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部品説明 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューとk246ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2461
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2461 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A)
RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A)
• Low Ciss Ciss = 1400 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
100 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±20 A
Drain Current (pulse)*
ID(pulse)
±80 A
Total Power Dissipation (Tc = 25 ˚C) PT1
35 W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
20 A
Single Avalanche Energy**
EAS
40 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
123
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
Document No. TC-2529
(O. D. No. TC-8078)
Date Published April 1995 P
Printed in Japan
© 1995
1 Page TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100 R(DaSt(oVn)GLSim= i1te0IdDV)(DC)
ID(pulse)
100
s
1 ms
10
1
Power DissipatDioC2n0L0im1m0istmeds
PW=10
s
TC = 25 ˚C
0.1 Single Pulse
1 10
100 1000
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
100
10 TA = –25 ˚C
25 ˚C
125 ˚C
1
VDS = 10 V
0 5 10 15
VGS - Gate to Source Voltage - V
2SK2461
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
VGS = 10 V
40
Pulsed
VGS = 6 V
30
VGS = 4 V
20
10
0 2 468
VDS - Drain to Source Voltage - V
3
3Pages SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
IAS = 20 A
10
EAS = 40 mJ
1.0
VDD = 50 V
VGS = 20 V → 0
RG = 25 Ω
10 µ 100 µ
1m
L - Inductive Load - H
10 m
2SK2461
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
VDD = 50 V
140 RG = 25 Ω
VGS = 20 V → 0
120 IAS ≤ 20 A
100
80
60
40
20
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
6
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ k246 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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