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Datasheet EKIN2-70D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1EKIN2-70DE-Series I/Q Demodulator 70 MHz

E-Series 2 I/Q Demodulator — 70 MHz EKIN2-70D EKIN2-70D E-Series I/Q Demodulator 70 MHz Features • • • Excellent Phase and Amplitude Balance LO Power +10 dBm Typical Surface Mount SM-28 Package Description M/A-COM’s EKIN2-70D is a passive, high performance surface mount Demodulator. I
Tyco Electronics
Tyco Electronics		data


EKI Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1EKI04027N Channel Trench Power MOSFET

40 V, 85 A, 2.6 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04027 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 85 A  RDS(ON) ----------3.2 mΩ max. (VGS = 10 V, ID = 82.5 A)  Qg------44.9 nC (VGS
SANKEN
SANKEN		mosfet
2EKI04036N Channel Trench Power MOSFET

40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04036 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 80 A  RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A)  Qg------26.4 nC (VGS
SANKEN
SANKEN		mosfet
3EKI04047N Channel Trench Power MOSFET

40 V, 80 A, 4.1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04047 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 80 A  RDS(ON) ----------5.2 mΩ max. (VGS = 10 V, ID = 42.8 A)  Qg------16.0 nC (VGS
SANKEN
SANKEN		mosfet
4EKI06051N Channel Trench Power MOSFET

60 V, 85 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI06051 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 85 A  RDS(ON) ----------4.9 mΩ max. (VGS = 10 V, ID = 55.0 A)  Qg------44.9 nC (VGS
SANKEN
SANKEN		mosfet
5EKI06075N Channel Trench Power MOSFET

60 V, 78 A, 5.1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI06075 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 78 A  RDS(ON) ----------6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)  Qg------26.9 nC (VGS
SANKEN
SANKEN		mosfet
6EKI06108N Channel Trench Power MOSFET

60 V, 57 A, 7.0 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI06108 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 57 A  RDS(ON) ----------9.2 mΩ max. (VGS = 10 V, ID = 28.5 A)  Qg------16.9 nC (VGS
SANKEN
SANKEN		mosfet
7EKI07076N Channel Trench Power MOSFET

75 V, 85 A, 5.3 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI07076 Features  V(BR)DSS --------------------------------- 75 V (ID = 100 µA)  ID ---------------------------------------------------------- 85 A  RDS(ON) ----------6.9 mΩ max. (VGS = 10 V, ID = 44.0 A)  Qg------42.9 nC (VGS
SANKEN
SANKEN		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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