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APT8065AVR の電気的特性と機能

APT8065AVRのメーカーはAdvanced Power Technologyです、この部品の機能は「Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.」です。


製品の詳細 ( Datasheet PDF )

部品番号 APT8065AVR
部品説明 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
メーカ Advanced Power Technology
ロゴ Advanced Power Technology ロゴ 




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APT8065AVR Datasheet, APT8065AVR PDF,ピン配置, 機能
APT8065AVR
800V 11.5A 0.650
POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-3
• Faster Switching
• 100% Avalanche Tested
D
• Lower Leakage
• Popular TO-3 Package
G
MAXIMUM RATINGS
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT8065AVR
800
11.5
46
±30
±40
200
1.6
-55 to 150
300
11.5
30
1210
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
800
11.5
2
0.650
25
250
±100
4
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61

1 Page





APT8065AVR pdf, ピン配列
APT8065AVR
16
VGS=5V, 5.5V, 6V, 7V, 10V & 15V
12
4.5V
8
4
4V
0
0 100 200 300 400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
30
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
24 250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
18
12
TJ = +125°C
6
TJ = +25°C
TJ = -55°C
0
02 4 6 8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
16
VGS=6V, 7V, 10V & 15V
12 VGS=5V & 5.5V
4.5V
8
4
4V
0
0 2 4 6 8 10 12
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.3
NORMALIZED TO
VGS = 10V @ 0.5 ID [Cont.]
1.2
1.1
VGS=10V
1.0
VGS=20V
0.9
0
5 10 15 20 25
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE


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部品番号部品説明メーカ
APT8065AVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Advanced Power Technology
Advanced Power Technology


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