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PDF APT10050JLC Data sheet ( Hoja de datos )

Número de pieza APT10050JLC
Descripción Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! APT10050JLC Hoja de datos, Descripción, Manual

APT10050JLC
1000V 19A 0.500
POWER MOS VITM
SS
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C and C .
iss rss
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
• Lower Gate Charge
• Lower Input Capacitance
G D SOT-227
ISOTOP®
"UL Recognized"
D
• Faster Switching
• 100% Avalanche Tested
• Easier To Drive
• Popular SOT-227 Package
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
ALContinuous Drain Current @ TC = 25°C
ICPulsed Drain Current 1
NGate-Source Voltage Continuous
CHGate-Source Voltage Transient
TE NTotal Power Dissipation @ TC = 25°C
D IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
C ALead Temperature: 0.063" from Case for 10 Sec.
AN RMAvalanche Current 1 (Repetitive and Non-Repetitive)
V ORepetitive Avalanche Energy 1
AD INFSingle Pulse Avalanche Energy 4
APT10050JLC
1000
19
76
±30
±40
450
3.6
-55 to 150
300
19
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
1000
19
3
0.500
25
250
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61

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