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TDA7294S の電気的特性と機能

TDA7294SのメーカーはST Microelectronicsです、この部品の機能は「100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY」です。


製品の詳細 ( Datasheet PDF )

部品番号 TDA7294S
部品説明 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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TDA7294S Datasheet, TDA7294S PDF,ピン配置, 機能
® TDA7294S
100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
VERY HIGH OPERATING VOLTAGE RANGE
(±45V)
DMOS POWER STAGE
HIGH OUTPUT POWER (100W @ THD =
10%, RL = 8, VS = ±40V MUSIC POWER)
MUTING/STAND-BY FUNCTIONS
NO SWITCH ON/OFF NOISE
VERY LOW DISTORTION
VERY LOW NOISE
SHORT CIRCUIT PROTECTION
THERMAL SHUTDOWN
CLIP DETECTOR
MODULARITY (MORE DEVICES CAN BE
EASILY CONNECTED IN PARALLEL TO
DRIVE VERY LOW IMPEDANCES)
DESCRIPTION
The TDA7294S is a monolithic integrated circuit
in Multiwatt15 package, intended for use as audio
class AB amplifier in Hi-Fi field applications
(Home Stereo, self powered loudspeakers, Top-
MULTIPOWER BCD TECHNOLOGY
Multiwatt15
ORDERING NUMBER: TDA7294SV
class TV). Thanks to the wide voltage range and
to the high out current capability it is able to sup-
ply the highest power into both 4and 8loads.
The built in muting function with turn on delay
simplifies the remote operation avoiding switching
on-off noises.
Parallel mode is made possible by connecting
more device through of pin11. High output power
can be delivered to very low impedance loads, so
optimizing the thermal dissipation of the system.
Figure 1: Typical Application and Test Circuit
VMUTE
VSTBY
June 2000
C7 100nF
+Vs C6 1000µF
R3 22K
C2
22µF
R2
680
IN- 2
C1 470nF
IN+ 3
R1 22K
SGND
(**)
4
+Vs
-
+
R5 10K
R4 22K
C3 10µF
MUTE 10
STBY 9
MUTE
STBY
C4 10µF
1
STBY-GND
(*) see Application note
(**) for SLAVE function
BUFFER DRIVER
7 11
+PWVs
13
14 OUT
THERMAL
SHUTDOWN
S/C
PROTECTION
BOOT
12 LOADER
C5
22µF
(*)
6
BOOTSTRAP
5
VCLIP
CLIP DET
8
-Vs
C9 100nF
15
-PWVs
C8 1000µF
-Vs
D97AU805A
1/13

1 Page





TDA7294S pdf, ピン配列
TDA7294S
ELECTRICAL CHARACTERISTICS (Refer to the Test Circuit VS = ±35V, RL = 8, GV = 30dB;
Rg = 50 ; Tamb = 25°C, f = 1 kHz; unless otherwise specified).
Symbol
VS
Iq
Ib
VOS
IOS
PO
d
IMAX
SR
GV
GV
eN
fL, fH
Ri
SVR
TS
Parameter
Operating Supply Range
Quiescent Current
Input Bias Current
Input Offset Voltage
Input Offset Current
RMS Continuous Output Power
Music Power (RMS) (*)
t = 1s
Total Harmonic Distortion (**)
Overcurrent Protection Threshold
Slew Rate
Open Loop Voltage Gain
Closed Loop Voltage Gain
Total Input Noise
Frequency Response (-3dB)
Input Resistance
Supply Voltage Rejection
Thermal Shutdown
Test Condition
d = 0.5%:
VS = ± 35V, RL = 8
VS = ± 32V, RL = 6
VS = ± 28V, RL = 4
d = 10%;
RL = 8; VS = ±40V
RL = 6; VS = ±35V
RL = 4; VS = ±30V (***)
PO = 5W; f = 1kHz
PO = 0.1 to 20W; f = 20Hz to 20kHz
VS = ±28V, RL = 4Ω:
PO = 5W; f = 1kHz
PO = 0.1 to 20W; f = 20Hz to 20kHz
A = curve
f = 20Hz to 20kHz
PO = 1W
f = 100Hz; Vripple = 0.5Vrms
Min.
±12
20
60
60
60
6.5
7
24
100
60
Typ.
30
Max.
±45
60
500
±10
±100
70
70
70
100
100
100
0.005
0.1
0.01
0.1
10
80
30 40
1
25
20Hz to 20kHz
75
150
Unit
V
mA
nA
mV
nA
W
W
W
W
W
W
%
%
%
%
A
V/µs
dB
dB
µV
µV
k
dB
°C
STAND-BY FUNCTION (Ref: -VS or GND)
VST on Stand-by on Threshold
VST off Stand-by off Threshold
ATTst-by Stand-by Attenuation
Iq st-by Quiescent Current @ Stand-by
MUTE FUNCTION (Ref: -VS or GND)
VMon Mute on Threshold
VMoff Mute off Threshold
ATTmute Mute Attenuation
1.5 V
3.5 V
70 90
dB
1 3 mA
1.5 V
3.5 V
60 80
dB
Note (*):
MUSIC POWER CONCEPT
MUSIC POWER is the maximal power which the amplifier is capable of producing across the rated load resistance (regardless of non linearity)
1 sec after the application of a sinusoidal input signal of frequency 1KHz.
Note (**): Tested with optimized Application Board (see fig. 2)
Note (***): Limited by the max. allowable current.
3/13


3Pages


TDA7294S 電子部品, 半導体
TDA7294S
INTRODUCTION
In consumer electronics, an increasing demand
has arisen for very high power monolithic audio
amplifiers able to match, with a low cost, the per-
formance obtained from the best discrete de-
signs.
The task of realizing this linear integrated circuit
in conventional bipolar technology is made ex-
tremely difficult by the occurence of 2nd break-
down phoenomenon. It limits the safe operating
area (SOA) of the power devices, and, as a con-
sequence, the maximum attainable output power,
especially in presence of highly reactive loads.
Moreover, full exploitation of the SOA translates
into a substantial increase in circuit and layout
complexity due to the need of sophisticated pro-
tection circuits.
To overcome these substantial drawbacks, the
use of power MOS devices, which are immune
from secondary breakdown is highly desirable.
The device described has therefore been devel-
oped in a mixed bipolar-MOS high voltage tech-
nology called BCDII 100.
1) Output Stage
The main design task in developping a power op-
erational amplifier, independently of the technol-
ogy used, is that of realization of the output stage.
The solution shown as a principle shematic by
Fig3 represents the DMOS unity - gain output
buffer of the TDA7294S.
This large-signal, high-power buffer must be ca-
pable of handling extremely high current and volt-
age levels while maintaining acceptably low har-
monic distortion and good behaviour over
frequency response; moreover, an accurate con-
trol of quiescent current is required.
A local linearizing feedback, provided by differen-
tial amplifier A, is used to fullfil the above require-
ments, allowing a simple and effective quiescent
current setting.
Proper biasing of the power output transistors
alone is however not enough to guarantee the ab-
sence of crossover distortion.
While a linearization of the DC transfer charac-
teristic of the stage is obtained, the dynamic be-
haviour of the system must be taken into account.
A significant aid in keeping the distortion contrib-
uted by the final stage as low as possible is pro-
vided by the compensation scheme, which ex-
ploits the direct connection of the Miller capacitor
at the amplifier’s output to introduce a local AC
feedback path enclosing the output stage itself.
2) Protections
In designing a power IC, particular attention must
be reserved to the circuits devoted to protection
of the device from short circuit or overload condi-
tions.
Due to the absence of the 2nd breakdown phe-
nomenon, the SOA of the power DMOS transis-
tors is delimited only by a maximum dissipation
curve dependent on the duration of the applied
stimulus.
In order to fully exploit the capabilities of the
power transistors, the protection scheme imple-
mented in this device combines a conventional
SOA protection circuit with a novel local tempera-
ture sensing technique which ” dynamically” con-
trols the maximum dissipation.
Figure 3: Principle Schematic of a DMOS unity-gain buffer.
6/13

6 Page



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部品番号部品説明メーカ
TDA7294

100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY

ST Microelectronics
ST Microelectronics
TDA7294S

100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY

ST Microelectronics
ST Microelectronics


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