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UPD5702 の電気的特性と機能

UPD5702のメーカーはNECです、この部品の機能は「3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPD5702
部品説明 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
メーカ NEC
ロゴ NEC ロゴ 




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UPD5702 Datasheet, UPD5702 PDF,ピン配置, 機能
PRELIMINARY DATA SHEET
Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
µPD5702TU
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
DESCRIPTION
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS
and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin
L2MM (Lead Less Mini Mold) plastic package.
FEATURES
• Output Power
: Pout = +21 dBm MIN. @Pin = 5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage
: VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.
APPLICATIONS
1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.)
ORDERING INFORMATION
Part Number
µPD5702TU-E2
Package
8-pin Lead-Less Minimold
Marking
5702
Supplying Form
8 mm wide embossed taping
Pin 5, 6, 7, 8 indicates pull-out direction of tape
Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPD5702TU
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10455EJ01V0DS (1st edition)
Date Published November 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2003

1 Page





UPD5702 pdf, ピン配列
µPD5702TU
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current of Q1
Drain Current of Q2
Total Power Dissipation
Channel Temperature
Storage Temperature
Operating Ambient Temperature
Maximum Input Power to Q1
Maximum Input Power to Q2
Symbol
Test Conditions
VDS TA = +25°C
VGS TA = +25°C
Ids1 TA = +25°C
Ids2 TA = +25°C
PD TA = +85°C
Tch
Tstg
TA
Pin1 TA = +25°C
Pin2 TA = +25°C
Note
Ratings
8.0
8.0
45
259
4.33
150
65 to +150
40 to +85
6
16
Unit
V
V
mA
mA
W
°C
°C
°C
dBm
dBm
Note Mounted on 33 × 21 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Drain to Source Voltage
Gate to Source Voltage
Maximum Input Power to Q1
Maximum Input Power to Q2
Symbol
Test Conditions
VDS TA = +25°C
VGS TA = +25°C
Pin1 VDS = 3V, TA = +25°C
Pin2 VDS = 3V, TA = +25°C
MIN.
2.7
0
TYP.
3.0
2.0
2.0
11.0
MAX.
3.5
2.5
5.0
15.0
Unit
V
V
dBm
dBm
ELECTRICAL CHARACTERISTICS
(f = 1.9 GHz, VDS = 3.0 V, TA = +25°C, unless otherwise specified, using our standard test fixture.)
Parameter
Symbol
Test Conditions
Gate to Source Voltage
Power Added Efficiency
Drain Current
VGS
PAE
I Note
DS
Pin = 5 dBm
Pout = +21.0 dBm
Input Return Loss
IRL Pin = 20 dBm
Output Return Loss
ORL
Output Power
Pout Pin = 5 dBm
Power Gain
GP
Linear Gain
GL Pin = 20 dBm
Adjacent Channel Power Leakage Padj1 Pin = 5 dBm, 600 kHz
1
Adjacent Channel Power Leakage Padj2 Pin = 5 dBm, 900 kHz
2
Occupied Band Width
OBW Pin = 5 dBm
MIN.
1.0
21.0
26.0
TYP.
1.9
28.0
155
10
8
26.5
60.0
MAX.
2.5
230
55.0
Unit
V
%
mA
dB
dB
dBm
dB
dB
dBc
− −70.0 60 dBc
250 kHz
Note IDS is total Drain currents of Q1 and Q2 part.
Preliminary Data Sheet PU10455EJ01V0DS
3


3Pages


UPD5702 電子部品, 半導体
ADJACENT CHANNEL POWER
(f = 1.9 GHz, VDS = 3 V, Pin = 5 dBm, TA = +25°C, unless otherwise specified)
ATTEN 20 dB
RL 5.0 dBm
10 dB/
MKR –71.17 dB
600 kHz
D
µPD5702TU
Center 1.900 GHz
RBW 1.0 kHz
VBW 3.0 kHz
Span 2.000 MHz
SWP 10.0 s
Remark The graphs indicate nominal characteristics.
6 Preliminary Data Sheet PU10455EJ01V0DS

6 Page



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