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PDF UPD16833AG3 Data sheet ( Hoja de datos )
| Número de pieza | UPD16833AG3 | |
| Descripción | MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16833A
MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The µPD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the
MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as
compared with conventional driver circuits using bipolar transistors.
A low-voltage malfunction prevention function is provided to prevent the IC from malfunctioning when the supply voltage
drops. By eliminating the charge pump circuit, the current during power-OFF is drastically decreased.
As the package, a 30-pin plastic shrink SOP is employed to enable the creation of compact, slim application sets.
This driver IC can drive two stepping motors at the same time, and is ideal for driving stepping motors in the lens of a
video camera.
FEATURES
• Four H bridge circuits employing power MOS FETs
• Low current consumption by eliminating charge pump
VM pin current when power-OFF: 10 µA MAX. VDD pin current: 10 µA MAX.
• Input logic frequency: 100 kHz
• 3-V power supply
Minimum operating supply voltage: 2.5 V
• Low-voltage malfunctioning prevention circuit
• 30-pin plastic shrink SOP (300 mil) (µPD16833AG3)
ORDERING INFORMATION
Part Number
µPD16833AG3
Package
30-pin plastic shrink SOP (300 mil)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Symbol
Conditions
Rating
Supply voltage
VDD
–0.5 to +6.0
VM –0.5 to +6.0
Input voltage
H bridge drive currentNote 1
Instantaneous H bridge drive currentNote 1
Power dissipationNote 2
VIN
IDR (DC)
IDR (pulse)
PT
DC
PW ≤ 10 ms, Duty ≤ 5 %
–0.5 to VDD + 0.5
±300
±700
1.19
Peak junction temperature
TCH (MAX)
150
Storage temperature range
Tstg
Notes 1. Permissible current per phase, when mounted on a printed circuit board
2. When mounted on a glass epoxy board (10 cm × 10 cm × 1 mm)
–55 to +150
The information in this document is subject to change without notice.
Unit
V
V
V
mA
mA
W
°C
°C
Document No. S13147EJ1V0DS00 (1st edition)
Date Published January 1998 N CP(K)
Printed in Japan
©
1998
1 page  
BLOCK DIAGRAM
NC NC NC NC NC
1 2 27 29 30
Low-voltage
malfunction
prevention
circuit
µPD16833A
VDD
3
4 VM1
IN1 12
EN1 13
Control circuit
DGND
IN2 14
EN2 15
Control circuit
DGND
H bridge
1
H bridge
2
5 1A
26 1B
6 PGND
23 VM2, 3
7 2A
24 2B
25 PGND
IN3 16
EN3 17
Control circuit
DGND
IN4 18
EN4 19
DGND 28
Control circuit
H bridge
3
H bridge
4
8 3A
22 3B
9 PGND
11 VM4
10 4A
20 4B
21 PGND
5
5 Page 
µPD16833A
RECOMMENDED SOLDERING CONDITIONS
It is recommended to solder this product under the conditions described below.
For soldering methods and conditions other than those listed below, consult NEC.
For the details of the recommended soldering conditions of this type, refer to the Semiconductor Device Mounting
Technology Manual (C10535E).
Soldering Method
Infrared reflow
VPS
Wave soldering
Soldering Conditions
Symbol of Recommended
Soldering
Peak package temperature: 235 °C, Time: 30 seconds MAX. (210 °C MIN.),
Number of times: 3 MAX., Number of days: NoneNote, Flux: Rosin-based
flux with little chlorine content (chlorine: 0.2 Wt% MAX.) is recommended.
IR35-00-3
Peak package temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.),
(200 °C MIN.), Number of times: 2 MAX., Number of days: NoneNote,
Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% MAX.)
is recommended.
VP15-00-2
Soldering bath temperature: 260 °C MAX., Time: 10 seconds MAX.,
Preheating temperature: 120 °C MAX.,
Number of times: 1, Flux: Rosin-based flux with little chlorine content
(chlorine: 0.2 Wt% MAX.) is recommended.
WS60-00-1
Note The number of storage days at 25 °C, 65% RH after the dry pack has been opened
Caution Do not use two or more soldering methods in combination.
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet UPD16833AG3.PDF ] | |
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