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UPC8112TB-E3 の電気的特性と機能

UPC8112TB-E3のメーカーはNECです、この部品の機能は「SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPC8112TB-E3
部品説明 SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE
メーカ NEC
ロゴ NEC ロゴ 




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UPC8112TB-E3 Datasheet, UPC8112TB-E3 PDF,ピン配置, 機能
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8112TB
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONE
DESCRIPTION
The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for
cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The µPC8112TB features
high impedance output of open collector. Similar ICs of the µPC2757TB and µPC2758TB feature low impedance
output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to
reduce your system size.
The µPC8112TB is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Excellent RF performance : IIP3 = –7 dBm@fRFin = 1.9 GHz (reference)
IM3 = –88 dBc@PRFin = –38 dBm, 1.9 GHz (reference)
• Similar conversion gain to µPC2757 and lower noise figure than µPC2758
• Minimized carrier leakage : RFIo = –80 dB@fRFin = 900 MHz (reference)
RFIo = –55 dB@fRFin = 1.9 GHz (reference)
• High linearity
: PO (sat) = –2.5 dBm TYP.@fRFin = 900 MHz
PO (sat) = –3 dBm TYP.@fRFin = 1.9 GHz
• Low current consumption
: ICC = 8.5 mA TYP.
• Supply voltage
: VCC = 2.7 to 3.3 V
• High-density surface mounting : 6-pin super minimold package
APPLICATIONS
• 1.5 GHz to 1.9 GHz cellular/cordless telephone (PHS, DECT, PDC1.5G and so on)
• 800 MHz to 900 MHz cellular telephone (PDC800M and so on)
ORDER INFORMATION
Part Number
µPC8112TB-E3
Package
6-pin super minimold
Markings
C2K
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face the tape perforation side.
Qty 3kpcs/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC8112TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12808EJ2V0DS00 (2nd edition)
Date Published June 2000 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1997, 2000

1 Page





UPC8112TB-E3 pdf, ピン配列
INTERNAL BLOCK DIAGRAM
RFinput
IFoutput
µPC8112TB
LOinput
µPC8112TB LOCATION EXAMPLE IN THE SYSTEM
Digital cordless phone
Low noise Tr.
RX
µPC8112TB
DEMOD.
I
Q
SW
TX
PA
VCO
÷N PLL
φ
90˚
PLL
I
Q
Data Sheet P12808EJ2V0DS00
3


3Pages


UPC8112TB-E3 電子部品, 半導体
µPC8112TB
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, VCC = VPS = VIFout = 3.0 V, PLOin = 10 dBm, ZS = ZL = 50 )
Parameter
Conversion Gain
Single Side Band Noise Figure
LO Leakage at RF pin
RF Leakage at LO pin
LO Leakage at IF pin
Input 3rd Order Intercept
PointNote
Symbol
CG
SSBNF
LORF
RFLO
LOif
IIP3
Test Conditions
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz, fLOin = 1.6 GHz
fRFin = 1.9 GHz, fLOin = 1.66 GHz
Reference
13
11
45
46
45
80
57
55
32
33
30
10
9
7
Unit
dB
dB
dB
dB
dB
dBm
Note IIP3 is determined by comparing two method; theoretical calculation and cross point of IM3 curve.
IIP3 = (IM3 × Pin + CG IM3) ÷ (IM3 1) (dBm) [IM3: IM3 curve inclination in linear range]
µPC8112’s IM3 is closer to 3 (theoretical inclination) than µPC2757 and µPC2758 of conventional ICs.
TEST CIRCUIT
Signal Generator
50
1 000 pF
C2
3
(Top View)
LOinput
PS
4
POWER
SAVE
Signal Generator
50
2 GND
1 000 pF
C1
1
RFinput
VCC
IFoutput
5
L1
6
C4, C5
3V
50
C6
Spectrum Analyzer
6 Data Sheet P12808EJ2V0DS00

6 Page



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部品番号部品説明メーカ
UPC8112TB-E3

SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE

NEC
NEC


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