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PDF UPC8109TB Data sheet ( 特性 )

部品番号 UPC8109TB
部品説明 SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER
メーカ NEC
ロゴ NEC ロゴ 

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UPC8109TB Datasheet, UPC8109TB PDF,ピン配置, 機能
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC8106TB, µPC8109TB
SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONES
DESCRIPTION
The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for
cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB
features low current consumption. From these two version, you can chose either IC corresponding to your system
design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your
system size.
The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT NESATTMIII silicon bipolar process.
This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface
from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and
reliability.
FEATURES
• Recommended operating frequency : fRFout = 0.4 GHz to 2.0 GHz, fIFin = 100 MHz to 400 MHz
• Supply voltage
: VCC = 2.7 to 5.5 V
• High-density surface mounting
: 6-pin super minimold package
• Low current consumption
: ICC = 9 mA TYP. @ µPC8106TB
ICC = 5 mA TYP. @ µPC8109TB
• Minimized carrier leakage
: Due to double balanced mixer
• Built-in power save function
APPLICATION
• Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on)
ORDERING INFORMATION
Part Number
µPC8106TB-E3
µPC8109TB-E3
Markings
C2D
C2G
Product Type
High IP3
Low current consumption
Package
6-pin super
minimold
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
QTY 3 kp/Reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC8106TB, µPC8109TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12770EJ2V0DS00 (2nd edition)
Date Published April 1999 N CP(K)
Printed in Japan
©
1997, 1999

1 Page





UPC8109TB pdf, ピン配列
µPC8106TB, µPC8109TB
SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEMS)
PHS, DECT
RX
DEMO.
I
Q
SW
TX
PA
Analog cellular telephone
RX
VCO
÷N PLL
µPC8106TB
Phase
shifter
90°
PLL
I
Q
FM
DEMO.
SW
TX PA
VCO
÷N PLL
PLL
µPC8109TB
MOD.
Data Sheet P12770EJ2V0DS00
3


3Pages


UPC8109TB 電子部品, 半導体
µPC8106TB, µPC8109TB
OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25 °C, VCC = VRFout = 3.0 V, PLOin = 5 dBm, and VPS 2.7 V unless otherwise mentioned)
Parameter
Output Third-Order Distortion
Intercept Point
Third-Order Intermodulation
Distortion 1
Third-Order Intermodulation
Distortion 2
SSB Noise Figure
Power Save
Response Time
Rise time
Fall time
Symbol
OIP31
OIP32
IM31
IM32
Conditions
Reference Value
µPC8106TB µPC8109TB
fIFin1 = 240.0 MHz
fRFout = 0.9 GHz
+5.5
+1.5
fIFin2 = 240.4 MHz
fRFout = 1.9 GHz
+2.0
1.0
fIFint = 240.0 MHz
fIFin2 = 240.4 MHz
PIFin = 20 dBm
fRFout = 0.9 GHz
fRFout = 1.9 GHz
31
30
29
28
Unit
dBm
dBc
dBc
SSBNF
TPS(rise)
TPS(fall)
fRFout = 0.9 GHz, fIFin = 240 MHz
VPS: GND VCC
VPS: VCC GND
8.5 8.5 dB
2.0 2.0 µs
2.0 2.0 µs
APPLICATION CIRCUIT EXAMPLE CHARACTERSISTICS FOR REFERENCE PURPOSE ONLY
(TA = +25 °C, VCC = VPS = VRFout = 3.0 V, fIFin = 130 MHz, fLOin = 1630 MHz, PLOin = 5 dBm)
Parameter
Conversion Gain
Maximum RF Output Power
Symbol
Conditions
CG
PO(sat)
fRFout = 1.5 GHz, with application circuit
example
fRFout = 1.5 GHz, with application circuit
example
Reference Value
µPC8106TB
7
Unit
dB
3.5 dBm
6 Data Sheet P12770EJ2V0DS00

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