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PDF UPA836TC Data sheet ( Hoja de datos )
| Número de pieza | UPA836TC | |
| Descripción | NPN SILICON EPITAXIAL TWIN TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TC
FEATURES
• SMALL PACKAGE OUTLINE:
1.5 mm x 1.1 mm, 33% smaller than conventional
SOT-363 package
• LOW HEIGHT PROFILE:
Just 0.55 mm high
• FLAT LEAD STYLE:
Reduced lead inductance improves electrical
performance
• TWO DIFFERENT DIE TYPES:
Q1 - Ideal oscillator transistor
Q2 - Ideal buffer amplifier transistor
DESCRIPTION
The UPA836TC contains one NE685 and one NE688 NPN
high frequency silicon bipolar chip. NEC's new ultra small TC
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil-
lator/buffer amplifier and other applications.
OUTLINE DIMENSIONS (Units in mm)
Package Outline TC
(TOP VIEW)
1.50±0.1
1.50±0.1
0.48
0.96
0.48
1.10±0.1
1
2
3
0.20
+0.1
-0.05
PIN OUT
6 1. Collector (Q1)
2. Emitter (Q1)
5 3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
4 6. Base (Q1)
0.55±0.05
0.11+0.1
-0.05
Note: Pin 1 is the lower left most pin
as the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA836TC
TC
SYMBOLS
PARAMETERS AND CONDITIONS
ICBO
IEBO
hFE
fT
Cre
|S21E|2
NF
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain1 at VCE = 3 V, IC = 10 mA
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
ICBO
IEBO
hFE
fT
fT
Cre
|S21E|2
|S21E|2
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain1 at VCE = 1 V, IC = 3 mA
Gain Bandwidth (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth (2) at VCE = 3 V, IC = 20 mA, f = 2 GHz
Feedback Capacitance2 at VCB = 1 V, IE = 0, f = 1 MHz
Insertion Power Gain (1) at VCE = 1 V, IC =3 mA, f = 2 GHz
Insertion Power Gain (2) at VCE = 3 V, IC =20 mA, f = 2 GHz
UNITS
µA
µA
GHz
pF
dB
dB
µA
µA
GHz
GHz
pF
dB
dB
MIN
75
10
7
80
4.0
2.5
TYP
12
0.4
8.5
1.5
4.5
9.0
0.75
3.5
6.5
MAX
0.1
0.1
150
0.7
2.5
0.1
0.1
160
0.85
NF Noise Figure (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
1.7 2.5
NF Noise Figure (2) at VCE = 3 V, IC = 7 mA, f = 2 GHz
dB
1.5
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet UPA836TC.PDF ] | |
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