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UPA811T の電気的特性と機能

UPA811TのメーカーはNECです、この部品の機能は「HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA811T
部品説明 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD
メーカ NEC
ロゴ NEC ロゴ 




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UPA811T Datasheet, UPA811T PDF,ピン配置, 機能
DATA SHEET
SILICON TRANSISTOR
µPA811T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD
The µPA811T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
FEATURES
• Low Noise
NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
• High Gain
|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
• A Small Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC4228)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
ORDERING INFORMATION
PART NUMBER QUANTITY
µPA811T
Loose products
(50 PCS)
µPA811T-T1 Taping products
(3 KPCS/Reel)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
20
10
1.5
35
150 in 1 element
200 in 2 elementsNote
150
–65 to +150
Note 110 mW must not be exceeded in 1 element.
UNIT
V
V
V
mA
mW
˚C
˚C
65
Q1
12
4
Q2
3
PIN CONNECTIONS
1. Collector (Q1) 4. Emitter (Q2)
2. Base (Q2)
5. Emitter (Q1)
3. Collector (Q2) 6. Base (Q1)
The information in this document is subject to change without notice.
Document No. P11464EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996

1 Page





UPA811T pdf, ピン配列
Cre - VCB Characteristics
5.0
f = 1 MHz
2.0
1.0
0.5
0.2
0.1
1
2
5 10 20
50
Collector to Base Voltage VCB (V)
l S21e l 2 - IC Characteristics
12
VCE = 3 V
f = 2 GHz
8
4
0
0.5 1
5 10
Collector Current IC (mA)
50
NF - IC Characteristics
5
VCE = 3 V
f = 2 GHz
4
3
2
1
0
0.5 1
5 10
Collector Current IC (mA)
50
µPA811T
fT - IC Characteristics
10
VCE = 3 V
f = 2 GHz
8
6
4
2
0
0.5 1
5 10
Collector Current IC (mA)
50
25
20
15
10
5
0
0.1
| S21e | 2 - f Characteristics
VCE = 3 V
IC = 5 mA
0.5 1.0 2.0
Frequency f (GHz)
5.0
3


3Pages


UPA811T 電子部品, 半導体
µPA811T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2

6 Page



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共有リンク

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部品番号部品説明メーカ
UPA811

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD

NEC
NEC
UPA811T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD

NEC
NEC


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