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PDF UPA1915 Data sheet ( Hoja de datos )
| Número de pieza | UPA1915 | |
| Descripción | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1915
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1915 is a switching device which can be driven
directly by a 2.5-V power source.
The µPA1915 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
RDS(on)1 = 55 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)2 = 58 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
RDS(on)3 = 82 mΩ MAX. (VGS = –2.7 V, ID = –2.5 A)
RDS(on)4 = 90 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A)
5 ORDERING INFORMATION
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16+–00..016
65 4
12 3
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
PART NUMBER
µPA1915TE
PACKAGE
SC-95 (Mini Mold Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–20
Gate to Source Voltage
VGSS
±12
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±4.5
±18
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: TH
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR-4 Board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14761EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000
1 page  
µ PA1915
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0V
1000
SWITCHING CHARACTERISTICS
1000
100
Ciss
Coss
Crss
10
−0.1
−1 −10
VDS - Drain to Source Voltage - V
−100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 VGS = 0V
10
1
0.1
100
tf
10
tr
td(off)
td(on)
VDD = −10 V
VGS(on) = −4.0 V
1 RG = 10 Ω
−0.1
−1.0
ID - Drain Current - A
−10
DYNAMIC INPUT CHARACTERISTICS
−5
ID = −4.5 A
−4
VDD = −16 V
−10 V
−3
−2
−1
0.01
0.4
0.6 0.8 1.0
VF(S-D) - Diode Forward Voltage - V
1.2
0
01234567
QG - Gate Charge - nC
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Without Board
100
Mounted on 250 mm2 x 35 µm
Copper Pad
Connected to Drain Electrode
10 in 50 mm x 50 mm x 1.6 mm
FR-4 Board Single Pulse
1
0.1
0.001
0.01
0.1 1
10
PW - Pulse Width - s
100 1000
Data Sheet G14761EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1915.PDF ] | |
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