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UPA1913 の電気的特性と機能

UPA1913のメーカーはNECです、この部品の機能は「P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA1913
部品説明 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
メーカ NEC
ロゴ NEC ロゴ 




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UPA1913 Datasheet, UPA1913 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1913
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1913 is a switching device which can be driven
directly by a 2.5-V power source.
The µPA1913 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
RDS(on)1 = 55 mMAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)2 = 58 mMAX. (VGS = –4.0 V, ID = –2.5 A)
RDS(on)3 = 82 mMAX. (VGS = –2.7 V, ID = –2.5A)
RDS(on)4 = 90 mMAX. (VGS = –2.5 V, ID = –2.5A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1913TE
6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–20
Gate to Source Voltage
VGSS
±12
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±4.5
±18
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16+–00..016
65 4
12 3
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Drain
V Body
Gate
Diode
V
A Gate
A
Protection
Diode
Source
W Marking: TE
W
°C
°C
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on FR4 board, t 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13807EJ2V0DS00 (2nd edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1998, 1999

1 Page





UPA1913 pdf, ピン配列
µ PA1913
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
30 60 90 120 150
TA - Ambient Temperature - ˚C
20
16
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
4.0 V
VGS = 10 V 4.5 V
12
2.5 V
8
4
0
0.0
0.2 0.4 0.6 0.8
VDS - Drain to Source Voltage - V
1.0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5 VDS = 10 V
ID = 1 mA
1.0
0.5
50
0 50 100
Tch - Channel Temperature - ˚C
150
FORWARD BIAS SAFE OPERATING AREA
100
10
1
(R@DSV(oGnS)
L=imi4te.5d V)
ID (DC)
ID
(PpWPuWl=se5P=)Ws10=0P1mW0sm= 1s
ms
0.1 Single Pulse
Mounted on 250 mm2x 35 µm Copper Pad
Connected to Drain Electrode in
0.01 50 mm x 50 mm x 1.6 mm FR-4 Board
0.1 1 10
VDS - Drain to Source Voltage - V
100
TRANSFER CHARACTERISTICS
100 VDS = 10 V
10
1
0.1
0.01
0.001
TA = 125˚C
75˚C
25˚C
25˚C
0.0001
0.00001
0
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
100 VDS = 10V
10
TA = 25˚C
1
25˚C
75˚C
125˚C
0.1
0.01
0.01
0.1 1 10
ID - Drain Current - A
100
Data Sheet D13807EJ2V0DS00
3


3Pages


UPA1913 電子部品, 半導体
[MEMO]
µ PA1913
6 Data Sheet D13807EJ2V0DS00

6 Page



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