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PDF UPA1911 Data sheet ( Hoja de datos )
| Número de pieza | UPA1911 | |
| Descripción | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1911
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1911 is a switching device which can be driven
directly by a 2.5-V power source.
The µPA1911 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 120 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
RDS(on)3 = 190 mΩ MAX. (VGS = –2.5 V, ID = –1.0A)
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16+–00..016
65 4
12 3
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.65
0.9 to 1.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1911TE
6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–20
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
–12/+6
# 2.5
# 10
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
W
°C
°C
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: TC
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13455EJ1V0DS00 (1st edition)
Date Published September 1999 NS CP(K)
Printed in Japan
©
1998, 1999
1 page  
µ PA1911
10000
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
1000
100
tf
td(off)
tr
td(on)
VDD = −10 V
VGS(on) = −4.0 V
10 RG = 10Ω
−0.1
−1
ID - Drain Current - A
−10
DYNAMIC INPUT CHARACTERISTICS
−10
ID = −2.5 A
−8
VDD = −10 V
−6.0 V
−6
10
1
0.1
0.01
0.4
0.6 0.8
1.0 1.2
VF(S-D) - Source to Drain Voltage - V
−4
−2
0
01
2 34567 8
Qg - Gate Charge - nC
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Without Board
100
Mounted on 250mm2 x 35 µm
Copper Pad
Connected to Drain Electrode
10 in 50mm x 50mm x 1.6mm
FR-4 Board Single Pulse
1
0.1
0.001
0.01
0.1 1
10
PW - Pulse Width - S
100 1000
Data Sheet D13455EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1911.PDF ] | |
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