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UPA1900 の電気的特性と機能

UPA1900のメーカーはNECです、この部品の機能は「N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA1900
部品説明 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
メーカ NEC
ロゴ NEC ロゴ 




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UPA1900 Datasheet, UPA1900 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1900
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1900 is a switching device which can be driven
directly by a 2.5 V power source.
The µPA1900 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
Can be driven by a 2.5 V power source
Low on-state resistance
RDS(on)1 = 35 mMAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 38 mMAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 45 mMAX. (VGS = 2.5 V, ID = 3.0 A)
ORDERING INFORMATION
PART NUMBER
µPA1900TE
PACKAGE
6-pin Mini Mold (Thin Type)
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16+–00..016
65 4
12 3
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
20
Gate to Source Voltage
VGSS
±12
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±5.5
±22
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
W
°C
°C
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: TG
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on FR-4 Board, t 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13809EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
© 1998, 1999

1 Page





UPA1900 pdf, ピン配列
5 TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 30 60 90 120 150
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
VGS = 4.5 V 4.0 V
16
2.5 V
12
8
4
0 0.2 0.4 0.6 0.8 1.0
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5 VDS = 10 V
ID = 1 mA
1.0
0.5
50
0 50 100
Tch - Channel Temperature - ˚C
150
µ PA1900
FORWARD BIAS SAFE OPERATING AREA
100
10
1
R(D@S(oVnG) LSim= i4tIe.D5d V()DC)
ID
(pulse)
PW =
5
100
s
10 ms
ms
1
ms
0.1 Single Pulse
Mounted on 250mm2x 35µm Copper Pad
Connected to Drain Electrode in
0.01 50mm x 50mm x 1.6mm FR-4 Board
0.1 1 10
VDS - Drain to Source Voltage - V
100
FORWARD TRANSFER CHARACTERISTICS
100
VDS = 10 V
10
1 TA = 125˚C
75˚C
0.1
0.01
TA = 25˚C
25˚C
0.001
0.0001
0.00001
0
1.0 2.0
VGS - Gate to Source Voltage - V
3.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS = 10 V
10 TA = 25˚C
25˚C
75˚C
125˚C
1
0.1
0.01
0.01
0.1 1
10
ID - Drain Current - A
100
Data Sheet D13809EJ1V0DS00
3


3Pages


UPA1900 電子部品, 半導体
[MEMO]
µ PA1900
6 Data Sheet D13809EJ1V0DS00

6 Page



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部品番号部品説明メーカ
UPA1900

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC
NEC


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