PDF UPA1856 Data sheet ( Hoja de datos )

Número de pieza	UPA1856
Descripción	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Fabricantes	NEC
Logotipo
Hay una vista previa y un enlace de descarga de UPA1856 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas
No Preview Available ! DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 45 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 48 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A) RDS(on)3 = 72 mΩ MAX. (VGS = –2.7 V, ID = –2.5 A) RDS(on)4 = 77 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A) PACKAGE DRAWING (Unit : mm) 85 1 :Drain1 2, 3 :Source1 4 :Gate1 5 :Gate2 6, 7 :Source2 8 :Drain2 1.2 MAX. 1.0±0.05 0.25 14 3° +5° –3° 0.1±0.05 0.5 0.6 +0.15 –0.1 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE µPA1856GR-9JG Power TSSOP8 0.65 0.8 MAX. 0.27 +0.03 –0.08 0.10 M 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS –20 Gate to Source Voltage VGSS ±12 Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 ID(DC) ID(pulse) PT ±4.5 ±18 2.0 Channel Temperature Tch 150 Storage Temperature Tstg –55 to +150 V V A A W °C °C EQUIVALENT CIRCUIT Drain1 Drain2 Gate1 Body Diode Gate2 Body Diode Gate Protection Diode Source1 Gate Protection Diode Source2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13808EJ2V0DS00 (2nd edition) Date Published March 2000 NS CP(K) Printed in Japan The mark • shows major revised points. © 1998, 1999 1 page µ PA1856 10000 1000 100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE f = 1 MHz VGS = 0V Ciss Coss Crss 10 −0.1 −1 −10 VDS - Drain to Source Voltage - V −100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 1 10000 SWITCHING CHARACTERISTICS 1000 100 VDD = −10 V VGS(on) = −4.0 V RG = 10 Ω 10 −0.1 −1 ID - Drain Current - A tf tr td(on) td(off) −10 DYNAMIC INPUT CHARACTERISTICS −8 ID = −4.5 A −6 VDD = −16 V −10 V −4 0.1 −2 0.01 0.4 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V 0 0 1 2 3 4 5 6 7 8 9 10 QG - Gate Charge - nC • 1000 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 62.5˚C/W 10 1 0.1 1m 10m Mounted on ceramic substrate of 5000 mm2 x 1.1 mm Single Pulse PD(FET1) : PD(FET2) = 1:1 100m 1 10 PW - Pulse Width - S 100 1000 Data Sheet D13808EJ2V0DS00 5 5 Page

Páginas	Total 8 Páginas
PDF Descargar	[ Datasheet UPA1856.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
UPA1850	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	NEC
UPA1851	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	NEC
UPA1852	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	NEC
UPA1855	N-CHANNEL MOS FIELD EFFECT TRANSISTOR	Renesas

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar