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UPA1810のメーカーはNECです、この部品の機能は「P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING」です。 |
部品番号 | UPA1810 |
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部品説明 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューとUPA1810ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1810
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1810 is a switching device which can be
driven directly by a 2.5 V power source.
The µPA1810 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
PACKAGE DRAWING (Unit : mm)
85
1, 5, 8 : Drain
2, 3, 6, 7: Source
4 : Gate
1.2 MAX.
1.0±0.05
0.25
FEATURES
• Can be driven by a 2.5 V power source
• Low on-state resistance
RDS(on)1 = 55 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)
RDS(on)2 = 60 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A)
RDS(on)3 = 100 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)
14
3.15 ±0.15
3.0 ±0.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1810GR-9JG
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–12
Gate to Source Voltage
VGSS
−10/+5
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID(DC)
ID(pulse)
PT
±4.0
±16
2.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
°C
°C
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.1
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11819EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
©
1996, 1999
1 Page TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 30 60 90 120 150
TA - Ambient Temperature - ˚C
−100
TRANSFER CHARACTERISTICS
VDS = −10 V
−10
−1
−0.1
−0.01
TA = 125˚C
75˚C
25˚C
−25˚C
−0.001
0
−0.5 −1.0 −1.5 −2.0 −2.5 −3.0
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
100 VDS = −10V
TA = −25 ˚C
10 25 ˚C
75 ˚C
125 ˚C
1
0.1
−0.1
−1 −10
ID - Drain Current - A
−100
µ PA1810
FORWARD BIAS SAFE OPERATING AREA
−100
−10
−R(@DS(VonG) SLim= ite4d.5 V)
−1
ID(pulse)
ID(DC)
10
PW =
ms
1
ms
100 ms
DC
−0.1
TA = 25 ˚C
Single Pulse
Mounted on Ceramic
−0.01 Substrate of 50cm2x 1.1mm
−0.1 −1
−10
VDS - Drain to Source Voltage - V
−100
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−1.0
VDS = −10 V
ID = −1 mA
−0.9
−0.8
−0.7
−0.6
−0.5
−50
0 50 100
Tch - Channel Temperature - ˚C
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
VGS = −2.5 V
80
TA = 125˚C
75˚C
60
25˚C
−25˚C
40
20
−0.01
−0.1 −1
−10
ID - Drain Current - A
−100
Data Sheet D11819EJ1V0DS00
3
3Pages [MEMO]
µ PA1810
6 Data Sheet D11819EJ1V0DS00
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ UPA1810 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UPA1810 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
UPA1811 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
UPA1812 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
UPA1813 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |