DataSheet.jp

UPA1770 の電気的特性と機能

UPA1770のメーカーはNECです、この部品の機能は「SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA1770
部品説明 SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




このページの下部にプレビューとUPA1770ダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

UPA1770 Datasheet, UPA1770 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1770
SWITCHING
DUAL P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1770 is a P-channel MOS Field Effect
Transistor designed for power management
applications of portable machines.
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1770G
Power SOP8
FEATURES
Dual chip type
Low on-resistance
RDS(on)1 = 37 mMAX. (VGS = –4.5 V, ID = –3.0 A)
RDS(on)2 = 39 mMAX. (VGS = –4.0 V, ID = –3.0 A)
RDS(on)3 = 59 mMAX. (VGS = –2.5 V, ID = –3.0 A)
Low input capacitance
Ciss = 1300 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage
VDSS –20 V
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 unit) Note2
5 Total Power Dissipation (1 unit) Note3
5 Total Power Dissipation (2 unit) Note3
VGSS
ID(DC)
ID(pulse)
PT
PT
PT
PT
! 12
! 6.0
! 24
0.40
0.75
1.7
2.0
V
A
A
W
W
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on FR4 Board of 1600 mm2 x 1.6 mm, Drain Pad size : 4.5 mm2 x 35 µm, TA = 25°C
5 3. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm, TA = 25°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14055EJ1V0DS00 (1st edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999

1 Page





UPA1770 pdf, ピン配列
µ PA1770
5 TYPICAL CHARACTERISTICS(TA = 25 °C, All terminals are connected.)
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 73.5 ˚C/W
10
1
0.1
0.01
0.001
0.00001 0.0001
0.001
0.01
0.1
Mounted
substrate
on
of
1ce2r0aS0mimnicgml2e×P2u.l2semm
Single Pulse , 1 unit
1 10 100 1000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
TA = 50˚C
TA = 25˚C
TA = 25˚C
10
TA = 75˚C
TA = 125˚C
TA = 150˚C
1
0
0.1 1 10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
70
ID = 6.0 A
60
Pulsed
50
40 ID = 3.0 A
30
20
10
0
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80 Pulsed
VGS = 2.5 V
60
40 VGS = 4.0 V
VGS = 4.5 V
20
1.5
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
ID = 1 mA
1.0
0.5
0
0.1
1 10
ID - Drain Current - A
100
0
75 50 25 0 25 50 75 100 125 150
Tch - Channel Temperature - ˚C
Data Sheet G14055EJ1V0DS00
3


3Pages


UPA1770 電子部品, 半導体
PACKAGE DRAWING (Unit : mm)
Power SOP8
8
5
14
5.37 MAX.
1 : Source 1
2 : Gate 1
7, 8 : Drain 1
3 : Source 2
4 : Gate 2
5, 6 : Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
0.05
0.12 M
0.5 ±0.2
0.10
µ PA1770
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6 Data Sheet G14055EJ1V0DS00

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ UPA1770 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
UPA1770

SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC
NEC


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap