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PDF UPA1758 Data sheet ( Hoja de datos )
| Número de pieza | UPA1758 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1758
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of
notebook computers, and Li-ion battery application.
FEATURES
• Dual MOS FET chips in small package
• 2.5 V gate drive type low on-state resistance
RDS(on)1 = 30 mΩ (MAX.) (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.0 A)
• Low Ciss : Ciss = 1100 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1758G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
14
5.37 Max.
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0)
VDSS
30
Gate to Source Voltage (VDS = 0)
VGSS
±12.0
Drain Current (DC)
Drain Current (Pulse) Note1
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 unit) Note2
ID(DC)
ID(pulse)
PT
PT
±6.0
±24
1.7
2.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to + 150
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Mounted on ceramic substrate of 2000 mm2 x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. D12911EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP(K)
Printed in Japan
© 1998
1 page  
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100 Mounted on ceramic
substrate of
10
1
RD(VS(oGnS)=L4im.5itVeId)D(DCI)D=(Pp6uolswAee) r=D2is4sipPAawtio2=n01L0P0im0w0mim=tesmd1P0w2m×=s11.1mms m, 1 unit
TA = 25 ˚C
0.1 Single Pulse
0.1 1 10 100
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
TA=150˚C
TA=125˚C
1 TA=75˚C
0.1
TA=25˚C
TA=−25˚C
TA=−50˚C
0 1 2 34
VGS - Gate to Source Voltage - V
µPA1758
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
2.4
2 unit
2.0
Mounted on ceramic
substrate of
2000mm2×1.1mm
1 unit
1.6
1.2
0.8
0.4
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
25
20 VGS=4.5 V
15 VGS=2.5 V
10
5
0 0.2 0.4 0.6 0.8
VDS - Drain to Source Voltage - V
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1758.PDF ] | |
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