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UPA1755 の電気的特性と機能

UPA1755のメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA1755
部品説明 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




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UPA1755 Datasheet, UPA1755 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1755
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is Dual N-channel MOS Field Effect
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
Dual chip type
Low on-resistance
RDS(on)1 = 32 mMAX. (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 45 mMAX. (VGS = 4.5 V, ID = 3.5 A)
Low input capacitance Ciss = 895 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PACKAGE DRAWING (Unit : mm)
85
14
5.37 Max.
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
PART NUMBER
µPA1755G
PACKAGE
Power SOP8
EQUIVALENT CIRCUIT
(1/2 Circuit)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0)
VDSS 30 V
Gate to Source Voltage (VDS = 0)
VGSS ±20 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 unit) Note2
ID(DC)
ID(pulse)
PT
PT
±7.0
±28
1.7
2.0
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to + 150 °C
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW 10 µs, Duty cycle 1 %
2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm2 x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G12715EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
©
1998

1 Page





UPA1755 pdf, ピン配列
µPA1755
TYPICAL CHARACTERISTICS (TA = 25 °C)
1 000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.01
0.001
10 µ
100µ
1m
10 m 100 m
Mounted on ceramic
substrate of 2000mm2 × 1.1mm
Single Pulse, 1 unit
1 10 100 1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS=10V
Pulsed
TA=50˚C
TA=25˚C
10 TA= 25˚C
TA=75˚C
1 TA=125˚C
TA=150˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
70 Pulsed
60
50
40
30 ID=3.5 A
20
10
0.1 1 10 100
ID- Drain Current - A
0 5 10 15
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
70
60
50 VGS=4.5V
40
30
VGS=10V
20
10
0
1
10 100
ID - Drain Current - A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS=10 V
2.4 ID=1 mA
2.0
1.6
1.2
0.8
50 0 50 100 150
Tch - Channel Temperature - ˚C
Data Sheet G12715EJ1V0DS00
3


3Pages


UPA1755 電子部品, 半導体
[MEMO]
µPA1755
6 Data Sheet G12715EJ1V0DS00

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

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