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UPA1723 の電気的特性と機能

UPA1723のメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA1723
部品説明 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




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UPA1723 Datasheet, UPA1723 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1723
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1723 is N-Channel MOS Field Effect Transistor
designed for power management switch.
FEATURES
Low on-state resistance
RDS(on)1 = 6.7 mMAX. (VGS = 4.5 V, ID = 7.0 A)
RDS(on)2 = 7.4 mMAX. (VGS = 4.0 V, ID = 7.0 A)
RDS(on)3 = 8.7 mMAX. (VGS = 2.5 V, ID = 7.0 A)
Low Ciss : Ciss = 3800 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1723G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS 20 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±12 V
Drain Current (DC)
ID(DC)
±13
A
Drain Current (pulse) Note1
ID(pulse)
±52
A
Total Power Dissipation (TA = 25°C) Note2
PT
2.0 W
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to + 150
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2mm
°C
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14026EJ1V0DS00 (1st edition)
Date Published December 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998, 1999

1 Page





UPA1723 pdf, ピン配列
5 TYPICAL CHARACTERISTICS (TA = 25 °C)
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
10
1
0.1
0
TA = 125˚C
75˚C
25˚C
-25˚C
VDS = 10 V
1 2 34
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
6
VGS = 2.5 V
VGS = 4.0 V
4 VGS = 4.5 V
2
0
100
50 0 50 100
Tch - Channel Temperature - ˚C
150
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
Pulsed
8
VGS = 2.5 V
6 VGS = 4.0 V
VGS = 4.5 V
4
2
0
0.1
1 10
ID - Drain Current - A
100
µ PA1723
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
50
40
30
20
10
0
0.0
VGS = 4.5 V
VGS = 4.0 V
VGS = 2.5 V
0.1 0.2 0.3
VDS - Drain to Source Voltage - V
0.4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
8 ID = 3 A
ID = 6 A
6
4
2
0
0 5 10
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
1.0 ID = 1 mA
0.5
0.2
50 0 50 100 150
Tch - Channel Temperature - ˚C
Data Sheet G14026EJ1V0DS00
3


3Pages


UPA1723 電子部品, 半導体
[MEMO]
µ PA1723
6 Data Sheet G14026EJ1V0DS00

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

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