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UPA1722 の電気的特性と機能

UPA1722のメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA1722
部品説明 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




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UPA1722 Datasheet, UPA1722 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1722
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1722 is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
Low on-resistance
RDS(on)1 = 21.0 mMAX. (VGS = 10 V, ID = 4.5 A)
RDS(on)2 = 29.0 mMAX. (VGS = 4.5 V, ID = 4.5 A)
RDS(on)3 = 32.0 mMAX. (VGS = 4.0 V, ID = 4.5 A)
Low Ciss: Ciss = 980 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1722G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS 30 V
VGSS ±20 V
EQUIVALENT CIRCUIT
Drain Current (DC)
ID(DC) ±9 A
Drain Current (pulse) Note1
ID(pulse)
±36
A
Total Power Dissipation (TA = 25°C) Note2
PT
2.0 W
Channel Temperature
Tch 150 °C
Gate
Drain
Body
Diode
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G13890EJ1V0DS00 (1st edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1998, 1999

1 Page





UPA1722 pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
µ PA1722
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
Mounted on ceramic
2.4
substrate of
1200 mm2 × 2.2 mm
2.0
1.6
1.2
0.8
0.4
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
RDS(on) Limited
(VGS=10V)
10
ID(pulse)
ID(DC)
Remark
Mounted on ceramicsubstrate of 1200 mm2 × 2.2 mm
1
TA = 25 ˚C
Single Pulse
0.2
0.02
0.1
1
10
VDS - Drain to Source Voltage - V
100
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 62.5˚C/W
10
1
0.1
0.01
100µ
1m
10 m
100 m
1
Mounted on ceramic substrate
of 1200 mm2 x 2.2 mm
Single Pulse
TA = 25˚C
10 100 1000
PW - Pulse Width - s
Data Sheet G13890EJ1V0DS00
3


3Pages


UPA1722 電子部品, 半導体
[MEMO]
µ PA1722
6 Data Sheet G13890EJ1V0DS00

6 Page



ページ 合計 : 8 ページ
 
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