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UPA1701A の電気的特性と機能

UPA1701AのメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA1701A
部品説明 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




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UPA1701A Datasheet, UPA1701A PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1701A
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for power management applications and Li-ion
battery application.
FEATURES
2.5 V gate drive and low on-resistance
RDS(on)1 = 27 m(MAX.) (VGS = 4.0 V, ID = 3.5 A)
RDS(on)2 = 40 m(MAX.) (VGS = 2.5 V, ID = 3.5 A)
Low Ciss : Ciss = 1040 pF (TYP.)
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1701AG
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
14
5.37 MAX.
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
EQUIVARENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS 30 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±12 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
±7.0
±28
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to + 150 °C
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 1.7mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. G12711EJ1V0DS00 (1st edition)
Date Published November 1998 NS CP(K)
Printed in Japan
© 1998

1 Page





UPA1701A pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
RDS((VonG) SL=im1i0teVd)
ID(pulse) = 28 A
10 ID(DC) = 7 A
Pw = 1 ms
10 ms
1
Power
100 ms
Dissipation Limited
TC = 25 ˚C
0.1 Single Pulse
0.1
1
10
VDS - Drain to Source Voltage - V
100
FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
1
0.1
0
TA = 125˚C
75˚C
25˚C
-25˚C
VDS = 10 V
1 2 34
VGS - Gate to Source Voltage - V
µ PA1701A
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
Mounted on ceramic
2.4
substrate of
1200mm2 ×1.7mm
2.0
1.6
1.2
0.8
0.4
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
20
4V
Pulsed
2.5 V
10
0 0.2 0.4 0.6 0.8
VDS - Drain to Source Voltage - V
3


3Pages


UPA1701A 電子部品, 半導体
[MEMO]
µ PA1701A
6

6 Page



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部品番号部品説明メーカ
UPA1701A

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC
NEC


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