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UPA1572B の電気的特性と機能

UPA1572BのメーカーはNECです、この部品の機能は「N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA1572B
部品説明 N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




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UPA1572B Datasheet, UPA1572B PDF,ピン配置, 機能
DATA SHEET
Compound Field Effect Power Transistor
µPA1572B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
DESCRIPTION
The µPA1572B is N-channel Power MOS FET Array
that built in 4 circuits designed for solenoid, motor and
lamp driver.
FEATURES
Full Mold Package with 4 Circuits
4 V driving is possible
Low On-state Resistance
RDS(on) = 0.6 MAX. (VGS = 10 V, ID = 1 A)
RDS(on) = 0.8 MAX. (VGS = 4 V, ID = 1 A)
Low Input Capacitance Ciss = 110 pF TYP.
ORDERING INFORMATION
Type Number
Package
µPA1572BH
10Pin SIP
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
1.4 0.6±0.1
2.54
1.4
0.5±0.1
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3579
2468
1 10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0) VDSS
60 V
Gate to Source Voltage (VDS = 0) VGSS (AC) ±20 V
Drain Current (DC)
ID (DS)
±2.0 A/unit
Drain Current (pulse)
ID (pulse) *1 ±6.0 A/unit
Total Power Dissipation
PT1 *2
20 W
Total Power Dissipation
PT2 *3
3.0 W
Channel Temperature
TCH 150 °C
Storage Tempreature
Tstg 55 to +150°C
Single Avalanche Current
IAS *4
5.0 A
Single Avalanche Energy
EAS *4
0.1 mJ
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10 : Source
*1 PW 10 µs, Duty Cycle 1 % *2 4 Circuits TC = 25 °C
*3 4 Circuits TA = 25 °C
*4 Starting TCH = 25 °C, VDD = 30 V, VGS = 20 V 0, RG = 25 , L = 100 µH
Build-in Gate Diodes are for protection from static electricity in handing.
In case high voltage over VGSs is applied, please append gate protection circuits.
The information in this document is subject to change without notice.
Document No. G11177EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
© 1996

1 Page





UPA1572B pdf, ピン配列
Test Circuit 1 Avalanche Capability
PG.
VGS = 20 V 0
D.U.T.
RG = 25
50
L
VDD
VDD
ID
BVDSS
IAS
VDS
Test Circuit 2 Switching Time
Starting TCH
µPA1572B
D.U.T.
PG. RG
RG = 10
VGS
0
t
t = 1µs
Duty Cycle 1 %
Test Circuit 3 Gate Charge
RL VGS
VGS
Wave From
0 10 %
VGS (on)
90 %
VDD
ID 90 %
ID
Wave From
0 10 %
td (on)
tr
ton
90 %
ID
10 %
td (off)
tr
toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
3


3Pages


UPA1572B 電子部品, 半導体
µPA1572B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.8
0.6 VGS=4V
0.4
VGS=10V
0.2
0
50
1 000
ID = 1A
0 50 100 150
TCH - Channel Temperature -°C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
100 Ciss
Coss
Crss
10
1.0
0.1
1 000
1 10
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
di/dt =50A/ µ s
VGS = 0
100
10
0.1
1.0
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
Pulsed
VGS=2V
1.0
VGS=0
0.1
0
1 000
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
SWITCHING CHARACTERISTICS
100
td(off)
tf
tr
10 td(on)
1.0
0.1
VDD =30V
VGS =10V
RG =10
1.0 10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
ID=2A
14
60
VDD=12V
30V
48V
40
12
VGS 10
8
6
20 4
VDS 2
0
0 2468
QG - Gate Charge - nC
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
UPA1572

N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE

Renesas
Renesas
UPA1572B

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

NEC
NEC
UPA1572H

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY

NEC
NEC


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