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UPA1458のメーカーはNECです、この部品の機能は「NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE」です。 |
部品番号 | UPA1458 |
| |
部品説明 | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューとUPA1458ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1458
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1458 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
FEATURES
• Surge Absorber (C - B) built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
1.4 0.6 ±0.1
2.54
1.4
0.5 ±0.1
Part Number
µPA1458H
Package
10 Pin SIP
Quality Grade
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3579
2468
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
VCBO 60 ±10
V
Collector to Emitter Voltage VCEO 60 ±10 V
Emitter to Base Voltage
VEBO
7
V
Surge Sustaining Energy
ECEO(sus) 25 mJ/unit
Collector Current (DC)
IC(DC)
±5 A/unit
Collector Current (pulse)
IC(pulse)* ±10 A/unit
Collector Current
ICBS(DC) 5 mA/unit
Base Current (DC)
IB(DC)
0.5 A/unit
Total Power Dissipation
PT1** 3.5
W
Total Power Dissipation
PT2*** 28
W
Junction Temperature
Tj 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
1
(B)
(C)
R1 R2
(E)
10
PIN No.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10 : Emitter (E)
R1 =.. 3.0 kΩ
R2 =.. 300 Ω
Document No. IC-3523
(O. D. No. IC-6342)
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
1 Page TYPICAL CHARACTERISTICS (Ta = 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
100
80
60 S/b Limited
40
20
0 50 100 150
TC - Case Temperature - ˚C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NEC
µ PA1458
4 4 Circuits Operation
3 Circuits Operation
3 2 Circuits Operation
1 Circuit Operation
2
1
0 25 50 75 100 125 150
Ta - Ambient Temperature - ˚C
DC CURRENT GAIN vs. COLLECTOR CURRENT
100000
VCE = 2.0 V
Pulse Test
10000
1000
100
Ta
=
125752˚C5˚C˚C
–25
˚C
10
0.01
0.1 1
IC - Collector Current - A
10
µPA1458
SAFE OPERATING AREA
10
5
2 LimDiitsesdipation
1
0.5
0.2
Single Pulse
0.1
15
10 20
50
VCE - Collector to Emitter Voltage - V
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
20 1 Circuit Operation
10
0 25 50 75 100 125 150
TC - Case Temperature - ˚C
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
10
IC = 1000·IB
Pulse Test
1
0.1
0.1
Ta = –25 ˚C
75 ˚C
25 ˚C
125 ˚C
1
IC - Collector Current - A
10
3
3Pages [MEMO]
µPA1458
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
6 Page | |||
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部品番号 | 部品説明 | メーカ |
UPA1452H | NPN SILICON EPITAXIAL POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING | NEC |
UPA1453 | PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE | NEC |
UPA1453H | PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE | NEC |
UPA1454 | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE | NEC |