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UP04315 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 UP04315
部品説明 Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 



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UP04315 Datasheet, UP04315 PDF,ピン配置, 機能
Composite Transistors
UP04315
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
(0.30)
654
0.20+–00..0025
Unit: mm
0.10±0.02
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
UNR2215 + UNR2115
123
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Tr1 Collector-base voltage
(Emitter open)
VCBO
50
Collector-emitter voltage
(Base open)
VCEO
50
Collector current
Tr2 Collector-base voltage
(Emitter open)
IC
VCBO
100
50
Collector-emitter voltage
(Base open)
VCEO
50
Overall
Collector current
Total power dissipation
Junction temperature
Storage temperature
IC 100
PT 125
Tj 125
Tstg 55 to +125
Unit
V
V
mA
V
V
mA
mW
°C
°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: CB
Internal Connection
65
4
Tr1
Tr2
123
Electrical Characteristics Ta = 25°C ± 3°C
Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.01 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
160 460
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25 V
Output voltage high level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 k
4.9
V
Output voltage low level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 k
0.2 V
Input resistance
R1
30% 10 +30% k
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
SJJ00268BED
1

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