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UNR9119JのメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Transistor」です。 |
部品番号 | UNR9119J |
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部品説明 | Silicon PNP Epitaxial Transistor | ||
メーカ | Panasonic Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとUNR9119Jダウンロード(pdfファイル)リンクがあります。 Total 19 pages
Transistors with built-in Resistor
UNR911xJ Series (UN911xJ Series)
Silicon PNP epitaxial planar type
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• SS-Mini type package, allowing automatic insertion through tape
packing.
1.60+–00..0035
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
Unit: mm
0.12+–00..0013
■ Resistance by Part Number
Marking Symbol (R1)
• UNR9110J (UN9110J) 6L
47 kΩ
• UNR9111J (UN9111J) 6A
10 kΩ
• UNR9112J (UN9112J) 6B
22 kΩ
• UNR9113J (UN9113J) 6C
47 kΩ
• UNR9114J (UN9114J) 6D
10 kΩ
• UNR9115J (UN9115J) 6E
10 kΩ
• UNR9116J (UN9116J)
• UNR9117J (UN9117J)
• UNR9118J (UN9118J)
• UNR9119J (UN9119J)
• UNR911AJ
• UNR911BJ
6F
6H
6I
6K
6X
6Y
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
100 kΩ
100 kΩ
• UNR911CJ
6Z
• UNR911DJ (UN911DJ) 6M
47 kΩ
• UNR911EJ (UN911EJ) 6N
47 kΩ
• UNR911FJ (UN911FJ) 6O
4.7 kΩ
• UNR911HJ (UN911HJ) 6P
2.2 kΩ
• UNR911LJ (UN911LJ)
• UNR911MJ
• UNR911NJ
• UNR911TJ (UN911TJ)
• UNR911VJ
6Q
EI
EW
EY
FC
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
(R2)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
100 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
5˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Internal Connection
R1
B
R2
C
E
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
−50
−50
−100
125
125
−55 to +125
Unit
V
V
mA
mW
°C
°C
Publication date: January 2004
Note) The part numbers in the parenthesis show conventional part number.
SJH00038BED
1
1 Page UNR911xJ Series
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Emitter-base resistance UNR911CJ
Resistance UNR911MJ
ratio UNR911NJ
R2
R1/R2
UNR9118J/9119J
UNR9114J
UNR911HJ
UNR911TJ
UNR911FJ
UNR911AJ/911VJ
UNR9111J/9112J/9113J/911LJ
UNR911EJ
UNR911DJ
Min
−30%
0.08
0.17
0.17
0.37
0.8
1.70
3.7
Typ
47
0.047
0.1
0.10
0.21
0.22
0.47
0.47
1.0
1.0
2.14
4.7
Max
+30%
0.12
0.25
0.27
0.57
1.2
2.60
5.7
Unit
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
150
125
100
75
50
25
0
0 40 80 120 160
Ambient temperature Ta (°C)
Characteristics charts of UNR9110J
IC VCE
−120
IB = −1.0 mA
Ta = 25°C
− 0.9 mA
−100
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80 − 0.4 mA
− 0.3 mA
−102
−10
VCE(sat) IC
IC / IB = 10
−60 −1
− 0.2 mA
−40
25°C
Ta = 75°C
− 0.1 mA
−10 −1
−20
−25°C
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
−10 −2
−10 −1
−1
−10
Collector current IC (mA)
−102
hFE IC
400
VCE = –10 V
300
Ta = 75°C
200 25°C
−25°C
100
0
−1 −10 −102 −103
Collector current IC (mA)
SJH00038BED
3
3Pages UNR911xJ Series
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−10 −1
−1
−10 −102
Collector-base voltage VCB (V)
IO VIN
−104
VO = −5 V
Ta = 25°C
−102
−103 −10
VIN IO
VO = − 0.2 V
Ta = 25°C
−102
−1
−10 −10 −1
−1
−0.4
−0.6 −0.8 −1.0 −1.2
Input voltage VIN (V)
−1.4
−10 −2
−10 −1
−1 −10
Output current IO (mA)
−102
Characteristics charts of UNR9114J
−160
−120
−80
−40
IC VCE
IB = −1.0 mA
Ta = 25°C
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
VCE(sat) IC
−102
IC / IB = 10
−10
−1
−10 −1
25°C
Ta = 75°C
−25°C
−10 −2
−10 −1
−1
−10
Collector current IC (mA)
−102
hFE IC
400
VCE = −10 V
300
Ta = 75°C
200
25°C
−25°C
100
0
−1 −10 −102 −103
Collector current IC (mA)
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−10 −1
−1
−10 −102
Collector-base voltage VCB (V)
IO VIN
VIN IO
−104
VO = −5 V
Ta = 25°C
−103
VO = − 0.2 V
Ta = 25°C
−103
−102
−102
−10
−10 −1
−1
−0.4
−0.6 −0.8 −1.0 −1.2
Input voltage VIN (V)
−1.4
−10 −1
−10 −1
−1 −10
Output current IO (mA)
−102
6 SJH00038BED
6 Page | |||
ページ | 合計 : 19 ページ | ||
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部品番号 | 部品説明 | メーカ |
UNR9119J | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |