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UNR9119J の電気的特性と機能

UNR9119JのメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 UNR9119J
部品説明 Silicon PNP Epitaxial Transistor
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 




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UNR9119J Datasheet, UNR9119J PDF,ピン配置, 機能
Transistors with built-in Resistor
UNR911xJ Series (UN911xJ Series)
Silicon PNP epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape
packing.
1.60+–00..0035
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
Unit: mm
0.12+–00..0013
Resistance by Part Number
Marking Symbol (R1)
UNR9110J (UN9110J) 6L
47 k
UNR9111J (UN9111J) 6A
10 k
UNR9112J (UN9112J) 6B
22 k
UNR9113J (UN9113J) 6C
47 k
UNR9114J (UN9114J) 6D
10 k
UNR9115J (UN9115J) 6E
10 k
UNR9116J (UN9116J)
UNR9117J (UN9117J)
UNR9118J (UN9118J)
UNR9119J (UN9119J)
UNR911AJ
UNR911BJ
6F
6H
6I
6K
6X
6Y
4.7 k
22 k
0.51 k
1 k
100 k
100 k
UNR911CJ
6Z
UNR911DJ (UN911DJ) 6M
47 k
UNR911EJ (UN911EJ) 6N
47 k
UNR911FJ (UN911FJ) 6O
4.7 k
UNR911HJ (UN911HJ) 6P
2.2 k
UNR911LJ (UN911LJ)
UNR911MJ
UNR911NJ
UNR911TJ (UN911TJ)
UNR911VJ
6Q
EI
EW
EY
FC
4.7 k
2.2 k
4.7 k
22 k
2.2 k
(R2)
10 k
22 k
47 k
47 k
5.1 k
10 k
100 k
47 k
10 k
22 k
10 k
10 k
4.7 k
47 k
47 k
47 k
2.2 k
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Internal Connection
R1
B
R2
C
E
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
125
125
55 to +125
Unit
V
V
mA
mW
°C
°C
Publication date: January 2004
Note) The part numbers in the parenthesis show conventional part number.
SJH00038BED
1

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UNR9119J pdf, ピン配列
UNR911xJ Series
Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Emitter-base resistance UNR911CJ
Resistance UNR911MJ
ratio UNR911NJ
R2
R1/R2
UNR9118J/9119J
UNR9114J
UNR911HJ
UNR911TJ
UNR911FJ
UNR911AJ/911VJ
UNR9111J/9112J/9113J/911LJ
UNR911EJ
UNR911DJ
Min
30%
0.08
0.17
0.17
0.37
0.8
1.70
3.7
Typ
47
0.047
0.1
0.10
0.21
0.22
0.47
0.47
1.0
1.0
2.14
4.7
Max
+30%
0.12
0.25
0.27
0.57
1.2
2.60
5.7
Unit
k
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
150
125
100
75
50
25
0
0 40 80 120 160
Ambient temperature Ta (°C)
Characteristics charts of UNR9110J
IC VCE
120
IB = −1.0 mA
Ta = 25°C
0.9 mA
100
0.8 mA
0.7 mA
0.6 mA
0.5 mA
80 0.4 mA
0.3 mA
−102
10
VCE(sat) IC
IC / IB = 10
60 1
0.2 mA
40
25°C
Ta = 75°C
0.1 mA
−10 −1
20
25°C
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
−10 −2
−10 −1
1
10
Collector current IC (mA)
−102
hFE IC
400
VCE = –10 V
300
Ta = 75°C
200 25°C
25°C
100
0
1 10 −102 −103
Collector current IC (mA)
SJH00038BED
3


3Pages


UNR9119J 電子部品, 半導体
UNR911xJ Series
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−10 −1
1
10 −102
Collector-base voltage VCB (V)
IO VIN
−104
VO = −5 V
Ta = 25°C
−102
−103 10
VIN IO
VO = − 0.2 V
Ta = 25°C
−102
1
10 −10 −1
1
0.4
0.6 0.8 1.0 1.2
Input voltage VIN (V)
1.4
−10 −2
−10 −1
1 10
Output current IO (mA)
−102
Characteristics charts of UNR9114J
160
120
80
40
IC VCE
IB = −1.0 mA
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
−102
IC / IB = 10
10
1
−10 −1
25°C
Ta = 75°C
25°C
−10 −2
−10 −1
1
10
Collector current IC (mA)
−102
hFE IC
400
VCE = −10 V
300
Ta = 75°C
200
25°C
25°C
100
0
1 10 −102 −103
Collector current IC (mA)
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−10 −1
1
10 −102
Collector-base voltage VCB (V)
IO VIN
VIN IO
−104
VO = −5 V
Ta = 25°C
−103
VO = − 0.2 V
Ta = 25°C
−103
−102
−102
10
10 1
1
0.4
0.6 0.8 1.0 1.2
Input voltage VIN (V)
1.4
−10 −1
−10 −1
1 10
Output current IO (mA)
−102
6 SJH00038BED

6 Page



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部品番号部品説明メーカ
UNR9119J

Silicon PNP Epitaxial Transistor

Panasonic Semiconductor
Panasonic Semiconductor


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