|
|
UNR4213のメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon NPN epitaxial planar type」です。 |
部品番号 | UNR4213 |
| |
部品説明 | Silicon NPN epitaxial planar type | ||
メーカ | Panasonic Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとUNR4213ダウンロード(pdfファイル)リンクがあります。 Total 14 pages
Transistors with built-in Resistor
UNR421x Series (UN421x Series)
Silicon NPN epitaxial planar type
For digital circuits
4.0±0.2
2.0±0.2
Unit: mm
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• New S type package, allowing supply with the radial taping
■ Resistance by Part Number
• UNR4210 (UN4210)
(R1)
47 kΩ
• UNR4211 (UN4211)
10 kΩ
• UNR4212 (UN4212)
22 kΩ
• UNR4213 (UN4213)
47 kΩ
• UNR4214 (UN4214)
10 kΩ
• UNR4215 (UN4215)
10 kΩ
• UNR4216 (UN4216)
4.7 kΩ
• UNR4217 (UN4217)
22 kΩ
• UNR4218 (UN4218)
0.51 kΩ
• UNR4219 (UN4219)
1 kΩ
• UNR421D (UN421D)
47 kΩ
• UNR421E (UN421E)
47 kΩ
• UNR421F (UN421F)
4.7 kΩ
• UNR421K (UN421K)
10 kΩ
• UNR421L (UN421L)
4.7 kΩ
(R2)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
0.75 max.
0.45+–00..1200
(2.5) (2.5)
123
Internal Connection
R1
B
R2
0.45+–00..1200
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
C
E
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00020BED
1
1 Page Common characteristics chart
PT Ta
400
UNR421x Series
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
Characteristics charts of UNR4210
IC VCE
60
IB = 1.0 mA
0.9 mA
Ta = 25°C
0.8 mA
50
40
0.4 mA
30
0.5 mA
0.3 mA 0.6 mA
0.7 mA
0.1 mA
20
10
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
−25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
400
VCE = 10 V
300
Ta = 75°C
25°C
200
−25°C
100
0
1 10 100 1 000
Collector current IC (mA)
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
0.1 1 10 100
Collector-base voltage VCB (V)
IO VIN
VIN IO
104
VO = 5 V
100
VO = 0.2 V
Ta = 25°C
Ta = 25°C
103 10
102 1
10 0.1
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
0.01
0.1
1 10
Output current IO (mA)
100
SJH00020BED
3
3Pages UNR421x Series
Characteristics charts of UNR4214
IC VCE
160
Ta = 25°C
IB = 1.0 mA
0.9 mA
120 0.8 mA
0.7 mA
0.6 mA
0.5 mA
80 0.4 mA
0.3 mA
100
10
1
40
0.2 mA
0.1
VCE(sat) IC
IC / IB = 10
25°C
Ta = 75°C
0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
−25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
400
VCE = 10 V
300
Ta = 75°C
200
25°C
−25°C
100
0
1 10 100 1 000
Collector current IC (mA)
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
0.1 1 10 100
Collector-base voltage VCB (V)
IO VIN
VIN IO
104
VO = 5 V
100
VO = 0.2 V
Ta = 25°C
Ta = 25°C
103 10
102 1
10 0.1
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
0.01
0.1
1 10
Output current IO (mA)
100
Characteristics charts of UNR4215
IC VCE
160
IB = 1.0 mA
0.9 mA
0.8 mA
Ta = 25°C
120 0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40 0.2 mA
0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
Ta = 75°C
0.1 25°C
−25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
400
VCE = 10 V
300
Ta = 75°C
200
25°C
−25°C
100
0
1 10 100 1 000
Collector current IC (mA)
6 SJH00020BED
6 Page | |||
ページ | 合計 : 14 ページ | ||
|
PDF ダウンロード | [ UNR4213 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UNR4210 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
UNR4211 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
UNR4212 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
UNR4213 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |