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UNR2124のメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Transistor」です。 |
部品番号 | UNR2124 |
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部品説明 | Silicon PNP Epitaxial Transistor | ||
メーカ | Panasonic Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとUNR2124ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Transistors with built-in Resistor
UNR212x Series (UN212x Series)
Silicon PNP epitaxial planar type
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
■ Resistance by Part Number
• UNR2121
• UNR2122
• UNR2123
• UNR2124
Marking Symbol (R1)
(UN2121) 7A
2.2 kΩ
(UN2122) 7B
4.7 kΩ
(UN2123) 7C
10 kΩ
(UN2124) 7D
2.2 kΩ
• UNR212X (UN212X) 7I
0.27 kΩ
• UNR212Y (UN212Y) 7Y
3.1 kΩ
(R2)
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
5 kΩ
4.6 kΩ
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
−50
−50
−500
200
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R1
B
R2
C
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
UNR212X
VCBO
VCEO
ICBO
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
−50 V
−50 V
−1.0 µA
− 0.1
Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
UNR212X
−1.0
− 0.5
µA
Emitter-base UNR2121
cutoff current UNR2122/212X/212Y
IEBO
VEB = −6 V, IC = 0
−5 mA
−2
(Collector open) UNR2123/2124
−1
Forward current UNR2121
transfer ratio UNR2122/212Y
hFE VCE = −10 V, IC = −5 mA
40
50
UNR2123/2124
60
UNR212X
20
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00008CED
1
1 Page UNR212x Series
Characteristics charts of UNR2121
IC VCE
VCE(sat) IC
−240
Ta = 25°C
−100
IC / IB = 10
−200
−160
−120
−80
−40
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
−10
−1
Ta = 75°C
− 0.1
25°C
−25°C
− 0.01
−1
−10
−100
−1 000
Collector current IC (mA)
hFE IC
400
VCE = −10 V
300
Ta = 75°C
200
100 25°C
−25°C
0
−1
−10
−100
−1 000
Collector current IC (mA)
Cob VCB
12 f = 1 MHz
IE = 0
10 Ta = 25°C
8
6
4
2
0
− 0.1
−1
−10 −100
Collector-base voltage VCB (V)
IO VIN
VIN IO
−104
VO = −5 V
−100
VO = − 0.2 V
Ta = 25°C
Ta = 25°C
−103
−10
−102
−1
−10 − 0.1
−1
− 0.4
− 0.6 − 0.8 −1.0 −1.2
Input voltage VIN (V)
−1.4
− 0.01
− 0.1
−1 −10
Output current IO (mA)
−100
Characteristics charts of UNR2122
IC VCE
VCE(sat) IC
−300
Ta = 25°C
−100
IC / IB = 10
−250
−200
−150
−100
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
−50 − 0.2 mA
− 0.1 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
−10
−1 Ta = 75°C
25°C
− 0.1
−25°C
− 0.01
−1
−10
−100
−1 000
Collector current IC (mA)
hFE IC
160
VCE = −10 V
Ta = 75°C
120
25°C
80
−25°C
40
0
−1
−10
−100
−1 000
Collector current IC (mA)
SJH00008CED
3
3Pages UNR212x Series
Cob VCB
24
f = 1 MHz
IE = 0
Ta = 25°C
20
16
12
8
4
0
−1 −10 −100
Collector-base voltage VCB (V)
−100
−10
VIN IO
VO = − 0.2 V
Ta = 25°C
−1
− 0.1
− 0.01
− 0.1
−1 −10
Output current IO (mA)
−100
Characteristics charts of UNR212Y
IC VCE
−240
Ta = 25°C
−100
−200
−160
IB = −1.2 mA
−1.0 mA
−10
VCE(sat) IC
IC / IB = 10
−120
− 0.8 mA
− 0.6 mA
−80
− 0.4 mA
−40
− 0.2 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
−1
− 0.1
Ta = 75°C
25°C
−25°C
− 0.01
−1
−10
−100
−1 000
Collector current IC (mA)
Cob VCB
24
f = 1 MHz
IE = 0
Ta = 25°C
20
16
12
8
4
0
−1 −10 −100
Collector-base voltage VCB (V)
VIN IO
−100
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.01
− 0.1
−1 −10
Output current IO (mA)
−100
hFE IC
240
VCE = −10 V
200
160 Ta = 75°C
120 25°C
−25°C
80
40
0
−1
−10
−100
−1 000
Collector current IC (mA)
6 SJH00008CED
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ UNR2124 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UNR2121 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |
UNR2122 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |
UNR2123 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |
UNR2124 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |