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UN9118のメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon PNP epitaxial planer transistor」です。 |
部品番号 | UN9118 |
| |
部品説明 | Silicon PNP epitaxial planer transistor | ||
メーカ | Panasonic Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとUN9118ダウンロード(pdfファイル)リンクがあります。 Total 14 pages
Transistors with built-in Resistor
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
1.6±0.15
0.4 0.8±0.1 0.4
Unit: mm
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN9111
6A
10kΩ
q UN9112
6B
22kΩ
q UN9113
6C
47kΩ
q UN9114
6D
10kΩ
q UN9115
6E
10kΩ
q UN9116
6F
4.7kΩ
q UN9117
6H
22kΩ
q UN9118
6I
0.51kΩ
q UN9119
6K
1kΩ
q UN9110
6L
47kΩ
q UN911D
6M
47kΩ
q UN911E
6N
47kΩ
q UN911F
6O
4.7kΩ
q UN911H
6P
2.2kΩ
q UN911L
6Q
4.7kΩ
q UNR911AJ 6X
100kΩ
q UNR911BJ 6Y
100kΩ
q UNR911CJ 6Z
—
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
100kΩ
—
47kΩ
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
125
125
–55 to +125
Unit
V
V
mA
mW
˚C
˚C
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
Unit: mm
1.60±0.05
0.80
0.80±0.05
0.425 0.425
+0.05
0.85–0.03
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
Internal Connection
R1
B
R2
C
E
1
1 Page UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
s Electrical Characteristics (continued) (Ta=25˚C)
Parameter
Symbol
Conditions
UN9111/9112/9113/911L
UN9114
UN9118/9119
Resis-
tance
ratio
UN911D
UN911E
UN911F
R1/R2
UN911H
UNR911AJ
Resistance between Emitter to Base UNR911CJ R2
min typ max Unit
0.8 1.0 1.2
0.17 0.21 0.25
0.08 0.1 0.12
4.7
2.14
0.47
0.17 0.22 0.27
1.0
–30% 47 30%
3
3Pages UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
–3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN9114
–160
–140
–120
–100
– 80
– 60
– 40
– 20
IC — VCE
IB= –1.0mA
Ta=25˚C
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200
25˚C
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–1000
– 300
–100
VIN — IO
VO= – 0.2V
Ta=25˚C
– 30
–10
–3
–1
– 0.3
– 0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
6
6 Page | |||
ページ | 合計 : 14 ページ | ||
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PDF ダウンロード | [ UN9118 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UN9110 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN9111 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN9112 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN9113 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |