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UN612YのメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon PNP epitaxial planer transistor」です。 |
部品番号 | UN612Y |
| |
部品説明 | Silicon PNP epitaxial planer transistor | ||
メーカ | Panasonic Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとUN612Yダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Transistors with built-in Resistor
UN6121/6122/6123/6124/612X/612Y
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q MT-1 type package, allowing supply with the radial taping.
s Resistance by Part Number
q UN6121
q UN6122
q UN6123
q UN6124
q UN612X
q UN612Y
(R1)
2.2kΩ
4.7KΩ
10kΩ
2.2kΩ
0.27kΩ
3.1kΩ
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–500
600
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
0.45+–00..015
2.5±0.5 2.5±0.5
123
1 : Emitter
2 : Collector
3 : Base
MT-1 Type Pakage
Internal Connection
R1
B
R2
C
E
1
1 Page Transistors with built-in Resistor
UN6121/6122/6123/6124/612X/612Y
Characteristics charts of UN6121
– 240
– 200
IC — VCE
Ta=25˚C
–160
–120
– 80
– 40
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200
100 25˚C
–25˚C
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
12
f=1MHz
IE=0
Ta=25˚C
10
8
6
4
2
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
–0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN6122
– 300
IC — VCE
Ta=25˚C
– 250
– 200
–150
–100
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
–50 –0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
160
VCE= –10V
Ta=75˚C
120
25˚C
80
– 25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
3
3Pages Transistors with built-in Resistor
UN6121/6122/6123/6124/612X/612Y
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN612Y
– 240
IC — VCE
Ta=25˚C
– 200
–160
IB= –1.2mA
–1.0mA
–120
– 0.8mA
– 0.6mA
– 80
– 0.4mA
– 40
– 0.2mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
240
VCE= –10V
200
160 Ta=75˚C
25˚C
120
– 25˚C
80
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–1 –3
–10 –30 –100
Collector to base voltage VCB (V)
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
6
6 Page | |||
ページ | 合計 : 6 ページ | ||
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部品番号 | 部品説明 | メーカ |
UN6121 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN6122 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN6123 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN6124 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |