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UN2227 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 UN2227
部品説明 Silicon NPN epitaxial planar type
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 



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UN2227 Datasheet, UN2227 PDF,ピン配置, 機能
Transistors with built-in Resistor
UNR2225 (UN2225), UNR2226 (UN2226),
UNR2227 (UN2227)
Silicon NPN epitaxial planar type
For muting
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
Resistance by Part Number
UNR2225
UNR2226
UNR2227
Marking Symbol (R1)
(UN2225) FZ
10 k
(UN2226) FY
4.7 k
(UN2227) FW 6.8 k
(R2)
6.8 k
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
30
20
5
600
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R1
B
R2
C
E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current UNR2227
transfer ratio UNR2225/2226
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
IC = 1 µA, IE = 0
IC = 2 mA, IB = 0
IE = 1 µA, IC = 0
VCB = 30 V, IE = 0
VEB = 5 V, IC = 0
VCE = 10 V, IC = 100 mA
Collector-emitter saturation voltage
Input resistance UNR2226
UNR2227
VCE(sat)
R1
IC = 50 mA, IB = 2.5 mA
UNR2225
Resistance ratio UNR2227
R1/R2
Min Typ Max
30
20
5
1
1
70
100 600
80
30% 4.7 +30%
6.8
10
0.8 1.0 1.2
Unit
V
V
V
µA
µA
mV
k
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00040CED
1

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