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UN2222 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 UN2222
部品説明 Silicon NPN epitaxial planer transistor
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 



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UN2222 Datasheet, UN2222 PDF,ピン配置, 機能
Transistors with built-in Resistor
UN2221/2222/2223/2224
Silicon NPN epitaxial planer transistor
For digital circuits
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
1
3
2
s Resistance by Part Number
Marking Symbol
q UN2221
9A
q UN2222
9B
q UN2223
9C
q UN2224
9D
(R1)
2.2k
4.7k
10k
2.2k
(R2)
2.2k
4.7k
10k
10k
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
VCBO
50
Collector to emitter voltage VCEO
50
Collector current
IC 500
Total power dissipation
PT
200
Junction temperature
Tj
150
Storage temperature
Tstg –55 to +150
s Electrical Characteristics (Ta=25˚C)
Unit
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
Parameter
Symbol
Conditions
min typ max
Collector cutoff current
Emitter
cutoff
current
UN2221
UN2222
UN2223/2224
ICBO
ICEO
IEBO
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
1
1
5
2
1
Collector to base voltage
Collector to emitter voltage
Forward
current
transfer
ratio
UN2221
UN2222
UN2223/2224
VCBO
VCEO
IC = 10µA, IE = 0
IC = 2mA, IB = 0
hFE VCE = 10V, IC = 100mA
50
50
40
50
60
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input
resis-
tance
UN2221/2224
UN2222
UN2223
VCE(sat)
VOH
VOL
fT
R1
IC = 100mA, IB = 5mA
VCC = 5V, VB = 0.5V, RL = 500
VCC = 5V, VB = 3.5V, RL = 500
VCB = 10V, IE = –50mA, f = 200MHz
4.9
(–30%)
0.25
0.2
200
2.2
4.7 (+30%)
10
Resistance ratio
R1/R2
UN2224
0.8 1.0 1.2
0.22
Unit
µA
µA
mA
V
V
V
V
V
MHz
k
1

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