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UN1231 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 UN1231
部品説明 Silicon NPN epitaxial planer transistor
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 



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UN1231 Datasheet, UN1231 PDF,ピン配置, 機能
Transistors with built-in Resistor
UN1231/1231A
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
s Features
q High forward current transfer ratio hFE.
q M type mold package.
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to UN1231
base voltage UN1231A
VCBO
20
60
V
Collector to UN1231
emitter voltage UN1231A
VCEO
20
50
V
Collector current
IC 0.7 A
Peak collector current
ICP
1.5
A
Total power dissipation
PT*
1.0
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg –55 to +150
˚C
* Printed circuit board: Copper foil area of 1cm2 or more and thickness of
1.7mm for the collector portion.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1(1k)
B
R2
(47k)
C
E
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
UN1231
UN1231A
ICBO
ICEO
IEBO
VCBO
VCB = 15V, IE = 0
VCE = 15V, IB = 0
VEB = 14V, IC = 0
IC = 10µA, IE = 0
UN1231
Collector to emitter voltage
VCEO
UN1231A
IC = 1mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Input resistance
Resistance ratio
hFE
VCE(sat)
R1
R1/R2
VCE = 10V, IC = 150mA*
IC = 100mA, IB = 5mA*
min typ max Unit
1 µA
10 µA
0.5 mA
20
V
60
20
V
50
800 2100
0.4 V
0.7 1 1.3 k
0.021
*Pulse measurement
1

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