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UHBS30-2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 UHBS30-2
部品説明 NPN SILICON RF POWER TRANSISTOR
メーカ Advanced Semiconductor
ロゴ Advanced Semiconductor ロゴ 



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UHBS30-2 Datasheet, UHBS30-2 PDF,ピン配置, 機能
UHBS30-2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBS30-2 is Designed for
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 9.0 A
VCBO
50 V
VCEO
30 V
VCES
50 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
100 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.5 OC/W
PACKAGE STYLE .230 6L FLG
.040x45° C
4X .025 R
A
B
.115
.430 D
E
.125
I
F
G
H
2XØ.130
L
JK
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
MAXIMUM
inches / mm
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
ORDER CODE: ASI10671
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 50 mA
BVEBO
IE = 10 mA
ICBO
VCB = 15 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
30
50
4.0
5
10 120
UNITS
V
V
V
mA
---
Cob VCB = 24 V
f = 1.0 MHz
50 pF
PG
ηC
VCE = 24 V
POUT = 30 W
f = 960 GHz
7.0
50
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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