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S1A の電気的特性と機能

S1AのメーカーはNXP Semiconductorsです、この部品の機能は「SMA controlled avalanche rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 S1A
部品説明 SMA controlled avalanche rectifiers
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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S1A Datasheet, S1A PDF,ピン配置, 機能
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
S1 series
SMA controlled avalanche rectifiers
Product specification
2000 Feb 14

1 Page





S1A pdf, ピン配列
Philips Semiconductors
SMA controlled avalanche rectifiers
Product specification
S1 series
SYMBOL
PARAMETER
VRMS
root mean square voltage
S1A
S1B
S1D
S1G
S1J
S1K
S1M
IF(AV)
average forward current
IFSM non-repetitive peak forward current
S1A to S1J
S1K and S1M
Tstg storage temperature
Tj junction temperature
CONDITIONS
averaged over any 20 ms period;
Ttp = 110 °C; see Fig.2
t = 8.3 ms half sine wave;
Tj = 25 °C prior to surge;
VR = VRRMmax
See Fig.3
MIN. MAX. UNIT
35 V
70 V
140 V
280 V
420 V
560 V
700 V
1A
30 A
25 A
65 +175 °C
65 +175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF forward voltage
IF = 1 A; see Fig.4
IR reverse current
VR = VRRMmax; see Fig.5
S1A to S1J
S1K and S1M
VR = VRRMmax; Tj = 165 °C; see Fig.5
trr
reverse recovery time
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.9
Cd diode capacitance VR = 4 V; f = 1 MHz; see Fig.6
TYP. MAX. UNIT
1.1 V
1 µA
5 µA
50 µA
1 − µs
8 pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point; see Fig.7
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
27
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 µm. For more
information please refer to the ‘General Part of associated Handbook’.
2000 Feb 14
3


3Pages


S1A 電子部品, 半導体
Philips Semiconductors
SMA controlled avalanche rectifiers
Product specification
S1 series
handbook, full pagewidth
DUT
10
+
25 V
50
1
IF
(A)
0.5
0
0.25
0.5
IR
(A)
1.0
t rr
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns.
Source impedance: 50 ; tr 15 ns.
Fig.9 Test circuit and reverse recovery time waveform and definition.
2000 Feb 14
6

6 Page



ページ 合計 : 12 ページ
 
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