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PDF BU426A Data sheet ( Hoja de datos )

Número de pieza BU426A
Descripción NPN SILICON POWER TRANSISTORS
Fabricantes Power Innovations Limited 
Logotipo Power Innovations Limited Logotipo



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No Preview Available ! BU426A Hoja de datos, Descripción, Manual

Copyright © 1997, Power Innovations Limited, UK
BU426, BU426A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q Rugged Triple-Diffused Planar Construction
q 900 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 50°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 2 ms, duty cycle 2%.
BU426
BU426A
BU426
BU426A
BU426
BU426A
SYMBOL
VCBO
VCES
VCEO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
VALUE
800
900
800
900
375
400
6
10
+2, -0.1
±3
70
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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BU426A pdf
BU426, BU426A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAP741AA
10
1·0
tp = 0.2 µs
tp = 0.5 µs
tp =
0.1 tp =
1 µs
2 µs
tp = 6 µs
tp = 20 µs
DC Operation
0·01
1·0 10
BU426
BU426A
100
VCE - Collector-Emitter Voltage - V
Figure 7.
1000
PRODUCT INFORMATION
5

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