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BU1507 の電気的特性と機能

BU1507のメーカーはNXP Semiconductorsです、この部品の機能は「Silicon Diffused Power Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BU1507
部品説明 Silicon Diffused Power Transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BU1507 Datasheet, BU1507 PDF,ピン配置, 機能
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1507AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 4 A; IB = 0.95 A
IC = 4 A; IB = 0.8 A
f = 16kHz
ICsat = 4 A; f = 16kHz
TYP.
-
-
-
-
-
-
-
4
0.25
MAX.
1500
700
8
15
45
1.0
5.0
-
0.5
UNIT
V
V
A
A
W
V
V
A
µs
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
55
MAX.
3.7
-
UNIT
K/W
K/W
1 Turn-off current.
October 1997
1
Rev 1.100

1 Page





BU1507 pdf, ピン配列
Philips Semiconductors
Silicon Diffused Power Transistor
TRANSISTOR
IC DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB T.U.T.
Cfb
Fig.3. Switching times test circuit.
hFE
100
VCE = 1 V
10
Product specification
BU1507AX
BU2507AF/X
Ths = 25 C
Ths = 85 C
1
0.01 0.1
1
10 IC / A 100
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
hFE
100
VCE = 5 V
BU2507AF/X
Ths = 25 C
Ths = 85 C
10
1
0.01 0.1 1 10 IC / A 100
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
0.1
BU2507AF/X
IC/IB = 3
IC/IB = 4
IC/IB = 5
0.01
0.1
1
10 IC / A
100
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
October 1997
3
Rev 1.100


3Pages


BU1507 電子部品, 半導体
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1507AX
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
6
Rev 1.100

6 Page



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