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BTS650PのメーカーはSiemens Semiconductor Groupです、この部品の機能は「Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)」です。 |
部品番号 | BTS650P |
| |
部品説明 | Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBTS650Pダウンロード(pdfファイル)リンクがあります。 Total 16 pages
PROFET® BTS650P
Smart Highside High Current Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Reverse battery protection
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
62 V
42 V
5.0 ... 34 V
6.0 mΩ
70 A
130 A
14 000
TO-220AB/7
Application
• Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
• Replaces electromechanical relays, fuses and
discrete circuits
77
1
Standard
1
SMD
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
IIN Temperature
sensor
VIN
V IS
Logic GND
I IS
IS
5
RIS
PROFET®
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Semiconductor Group
Page 1 of 16
1998-Nov.-2
1 Page Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC7)
junction - ambient (free air): RthJA
SMD version, device on PCB8):
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
BTS650P
Values
min typ max
-- -- 0.75
-- 60
--
33
Unit
K/W
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
IL = 20 A, Tj = 25 °C: RON
VIN = 0, IL = 20 A, Tj = 150 °C:
IL = 90 A, Tj = 150 °C:
Vbb = 6V9), IL = 20 A, Tj = 150 °C:
Nominal load current10) (Tab to pins 1,2,6,7)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 11)
Nominal load current10), device on PCB8))
TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V,
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13 VON = 1.8 V, Tc = 150 °C:
Turn-on time12)
Turn-off time
RL = 1 Ω , Tj =-40...+150°C
IIN
IIN
to 90% VOUT:
to 10% VOUT:
Slew rate on 12) (10 to 30% VOUT )
RL = 1 Ω , TJ = 25 °C
Slew rate off 12) (70 to 40% VOUT )
RL = 1 Ω , TJ = 25 °C
RON(Static)
IL(ISO)
IL(NOM)
IL(Max)
ton
toff
dV/dton
-dV/dtoff
--
--
55
13.6
250
150
100
30
--
--
4.4 6.0 mΩ
7.9 10.5
-- 10.7
10 17
70 -- A
17 -- A
-- --
-- -- A
-- 420 µs
-- 110
0.7 -- V/µs
1.1 -- V/µs
7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
10) Not tested, specified by design.
11) TJ is about 105°C under these conditions.
)12 See timing diagram on page 14.
Semiconductor Group
Page 3
1998-Nov.-2
3Pages Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
BTS650P
Values
Unit
min typ max
Diagnostic Characteristics
Current sense ratio,
static on-condition,
kILIS = IL : IIS,
VON < 1.5 V18),
VIS <VOUT - 5V,
VbIN > 4.0 V
see diagram on page 12
IL = 90 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 20 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 10 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 4 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Sense current saturation
Current sense leakage current
IIN = 0:
VIN = 0, IL ≤ 0:
Current sense overvoltage protection Tj =-40°C:
Ibb = 15 mA
Current sense settling time19)
Tj = 25...+150°C:
kILIS
IIS,lim
IIS(LL)
IIS(LH)
VbIS(Z)
ts(IS)
12 500 14 200 16 000
12 500 13 700 16 000
11 500 13 000 14 500
12 500 14 500 17 500
12 000 14 000 16 500
11 500 13 400 15 000
12 500 15 000 19 000
11 500 14 300 17 500
11 500 13 500 15 500
11 000 18 000 28 500
11 000 15 400 22 000
11 200 14 000 19 000
6.5 -- -- mA
-- -- 0.5 µA
-- 2 --
60 -- -- V
62 66
--
-- -- 500 µs
Input
Input and operating current (see diagram page 13)
IN grounded (VIN = 0)
Input current for turn-off20)
IIN(on)
IIN(off)
-- 0.8 1.5 mA
-- -- 80 µA
18) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
)19 Not tested, specified by design.
)20 We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Semiconductor Group
Page 6
1998-Nov.-2
6 Page | |||
ページ | 合計 : 16 ページ | ||
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部品番号 | 部品説明 | メーカ |
BTS650P | Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection) | Siemens Semiconductor Group |
BTS650P | Smart Highside High Current Power Switch | Infineon Technologies AG |