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BTS650P の電気的特性と機能

BTS650PのメーカーはSiemens Semiconductor Groupです、この部品の機能は「Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BTS650P
部品説明 Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BTS650P Datasheet, BTS650P PDF,ピン配置, 機能
PROFET® BTS650P
Smart Highside High Current Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads 1)
Low ohmic inverse current operation
Reverse battery protection
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of Vbb protection2)
Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
62 V
42 V
5.0 ... 34 V
6.0 m
70 A
130 A
14 000
TO-220AB/7
Application
Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and
discrete circuits
77
1
Standard
1
SMD
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
IIN Temperature
sensor
VIN
V IS
Logic GND
I IS
IS
5
RIS
PROFET®
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Semiconductor Group
Page 1 of 16
1998-Nov.-2

1 Page





BTS650P pdf, ピン配列
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC7)
junction - ambient (free air): RthJA
SMD version, device on PCB8):
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
BTS650P
Values
min typ max
-- -- 0.75
-- 60
--
33
Unit
K/W
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
IL = 20 A, Tj = 25 °C: RON
VIN = 0, IL = 20 A, Tj = 150 °C:
IL = 90 A, Tj = 150 °C:
Vbb = 6V9), IL = 20 A, Tj = 150 °C:
Nominal load current10) (Tab to pins 1,2,6,7)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 11)
Nominal load current10), device on PCB8))
TA = 85 °C, Tj 150 °C VON 0.5 V,
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13 VON = 1.8 V, Tc = 150 °C:
Turn-on time12)
Turn-off time
RL = 1 , Tj =-40...+150°C
IIN
IIN
to 90% VOUT:
to 10% VOUT:
Slew rate on 12) (10 to 30% VOUT )
RL = 1 , TJ = 25 °C
Slew rate off 12) (70 to 40% VOUT )
RL = 1 , TJ = 25 °C
RON(Static)
IL(ISO)
IL(NOM)
IL(Max)
ton
toff
dV/dton
-dV/dtoff
--
--
55
13.6
250
150
100
30
--
--
4.4 6.0 m
7.9 10.5
-- 10.7
10 17
70 -- A
17 -- A
-- --
-- -- A
-- 420 µs
-- 110
0.7 -- V/µs
1.1 -- V/µs
7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
10) Not tested, specified by design.
11) TJ is about 105°C under these conditions.
)12 See timing diagram on page 14.
Semiconductor Group
Page 3
1998-Nov.-2


3Pages


BTS650P 電子部品, 半導体
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
BTS650P
Values
Unit
min typ max
Diagnostic Characteristics
Current sense ratio,
static on-condition,
kILIS = IL : IIS,
VON < 1.5 V18),
VIS <VOUT - 5V,
VbIN > 4.0 V
see diagram on page 12
IL = 90 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 20 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 10 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 4 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Sense current saturation
Current sense leakage current
IIN = 0:
VIN = 0, IL 0:
Current sense overvoltage protection Tj =-40°C:
Ibb = 15 mA
Current sense settling time19)
Tj = 25...+150°C:
kILIS
IIS,lim
IIS(LL)
IIS(LH)
VbIS(Z)
ts(IS)
12 500 14 200 16 000
12 500 13 700 16 000
11 500 13 000 14 500
12 500 14 500 17 500
12 000 14 000 16 500
11 500 13 400 15 000
12 500 15 000 19 000
11 500 14 300 17 500
11 500 13 500 15 500
11 000 18 000 28 500
11 000 15 400 22 000
11 200 14 000 19 000
6.5 -- -- mA
-- -- 0.5 µA
-- 2 --
60 -- -- V
62 66
--
-- -- 500 µs
Input
Input and operating current (see diagram page 13)
IN grounded (VIN = 0)
Input current for turn-off20)
IIN(on)
IIN(off)
-- 0.8 1.5 mA
-- -- 80 µA
18) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
)19 Not tested, specified by design.
)20 We recommend the resistance between IN and GND to be less than 0.5 kfor turn-on and more than
500kfor turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Semiconductor Group
Page 6
1998-Nov.-2

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
BTS650P

Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

Siemens Semiconductor Group
Siemens Semiconductor Group
BTS650P

Smart Highside High Current Power Switch

Infineon Technologies AG
Infineon Technologies AG


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