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PDF BTS611L1E3230 Data sheet ( Hoja de datos )

Número de pieza BTS611L1E3230
Descripción Smart Two Channel Highside Power Switch
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! BTS611L1E3230 Hoja de datos, Descripción, Manual

PROFET® BTS 611 L1
Smart Two Channel Highside Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection Vbb(AZ)
43 V
Operating voltage
Vbb(on) 5.0 ... 34 V
channels:
On-state resistance RON
Load current (ISO) IL(ISO)
Current limitation IL(SCr)
each
both
parallel
200 100
2.3 4.4
44
m
A
A
TO-220AB/7
Application
µC compatible power switch with diagnostic
1
Standard
feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve
loads
Replaces electromechanical relays, fuses and discrete circuits
77
1
Straight leads
1
SMD
7
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
3 IN1
6 IN2
ESD
5 ST
Voltage
source
V Logic
Voltage
sensor
Logic
PROFET®
Overvoltage
protection
Current
limit 1
Gate 1
protection
+ V bb
4
Level shifter
Rectifier 1
Charge
pump 1
Charge
pump 2
Limit for
unclamped
ind. loads 1
Open load
Short to Vbb
detection 1
Temperature
sensor 1
Current
limit 2
Gate 2
protection
OUT1
1
Level shifter
Rectifier 2
Limit for
unclamped
ind. loads 2
GND
2 Signal GND
Open load
Short to Vbb
detection 2
Temperature
sensor 2
OUT2
7
R O1
R O2
GND
Load
Load GND
1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
12.96

1 page




BTS611L1E3230 pdf
BTS 611 L1
Parameter and Conditions, each channel
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions
Initial peak short circuit current limit (pin 4 to 1
or 7)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
Tj = Tjt (see timing diagrams, page 11)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2) 9)
Reverse battery voltage drop (Vout > Vbb)
IL = -1.8 A, each channel
Tj=150 °C:
IL(SCp)
IL(SCr)
VON(CL)
Tjt
Tjt
-Vbb
-VON(rev)
Values
Unit
min typ max
5.5 9.5
4.5 7.5
2.5 4.5
-- 4
41 47
150 --
-- 10
-- --
-- 610
13 A
11
7
-- A
53 V
-- °C
-- K
32 V
-- mV
Diagnostic Characteristics
Open load detection current
(on-condition)
Open load detection voltage10)
Tj=-40 °C:
Tj=25 ..150°C:
(off-condition)
Tj=-40..150°C:
Internal output pull down
(pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150°C
IL (OL)
VOUT(OL)
RO
10 -- 200 mA
10 -- 150
2 3 4V
4 10 30 k
9) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
10) External pull up resistor required for open load detection in off state.
Semiconductor Group
5

5 Page





BTS611L1E3230 arduino
Timing diagrams
Figure 1a: Vbb turn on:
IN1
IN2
V bb
V
OUT1
V
OUT2
ST open drain
Figure 2a: Switching a lamp:
IN
ST
BTS 611 L1
Both channels are symmetric and consequently the diagrams
are valid for each channel as well as for permuted channels
Figure 2b: Switching an inductive load
IN
t
ST d(ST)
*)
V
OUT
IL
t I L(OL)
t
*) if the time constant of load is too large, open-load-status may
occur
Figure 3a: Short circuit
shut down by overtempertature, reset by cooling
IN other channel: normal operation
V
OUT
I
L
Semiconductor Group
IL
IL(SCp) IL(SCr)
t
ST
t
Heating up may require several milliseconds, depending on
external conditions
11

11 Page







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