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PDF IL223AT Data sheet ( Hoja de datos )
| Número de pieza | IL223AT | |
| Descripción | PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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IL221AT/IL222AT/IL223AT
PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• High Current Transfer Ratio, IF=1 mA,
IL221AT, 100% Minimum
IL222AT, 200% Minimum
IL223AT, 500% Minimum
• Withstand Test Voltage, 2500 VACRMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL221AT/IL222AT/IL223AT is a high current
transfer ratio (CTR) optocoupler with a Gallium
Arsenide infrared LED emitter and a silicon NPN
photodarlington transistor detector.
This device has a CTR tested at an 1 mA LED
current. This low drive current permits easy interfac-
ing from CMOS to LSTTL or TTL.
This optocoupler is constructed in a standard SOIC-
8 foot print which makes it ideally suited for high
density applications. In addition to eliminating
through-holes requirements, this package conforms
to standards for surface mounted devices.
Maximum Ratings
Emitter
Peak Reverse Voltage ............................................ 6.0 V
Continuous Forward Current ............................... 60 mA
Power Dissipation at 25°C .................................. 90 mW
Derate Linearly from 25°C ............................ 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ..................... 30 V
Emitter-Collector Breakdown Voltage ....................... 5 V
Collector-Base Breakdown Voltage ........................ 70 V
Power Dissipation ............................................. 150 mW
Derate Linearly from 25°C ........................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ........................................... 240 mW
Derate Linearly from 25°C ........................... 3.3 mW/°C
Storage Temperature ......................... –55°C to +150°C
Operating Temperature ..................... –55°C to +100°C
Soldering Time at 260°C .................................... 10 sec.
Package Dimensions in Inches (mm)
.120±.005
(3.0±5.13)
.240
(6.10)
Pin One ID
Anode 1
CL
.154±.005
(3.9±1.13)
Cathode 2
NC 3
.016 (.41)
NC 4
.192±.005
(4.8±8.13)
.015±.002
(.3±8.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.4±9.13)
.004 (.10)
.008 (.20)
.125±.005
.008 (.20)
5° max.
(3.1±8.13)
.050 (1.27)
typ.
.040 (1.02)
.020±.004
(.1±5.10)
2 plcs.
R.010
Lead
(.25) max.Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (TA=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
Reverse Current
Capacitance
VF
IR
CO
1.0
0.1
25
Detector
Breakdown Voltage
Collector-Emitter
BVCEO
Emitter-Collector
BVECO
Collector-Base Voltage BVCBO
Collector-Emitter
30
5
70
Capacitance
Package
CCE
DC Current Transfer
Ratio
IL221AT
CTRDC
100
IL222AT
200
IL223AT
500
Collector-Emitter
Saturation Voltage
Isolation Test
VCE sat
Voltage
Capacitance,
VIO 2500
Input to Output
Resistance,
CIO
Input to Output
RIO
Specifications subject to change.
3.4
0.5
100
Max. Unit Condition
1.5 V
100 µA
pF
IF=1mA
VR=6.0 V
VF=0 V,
F=1 MHz
V IC=100 µA
V IE=100 µA
IC=10 µA
pF VCE=10 V
IF=1 mA,
VCE=5 V
ICE=0.5 mA,
1 V IF=1 mA
VACRMS t=1 sec.
pF
GΩ
Semiconductor Group
4–10
10.95
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet IL223AT.PDF ] | |
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