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IL216AT の電気的特性と機能

IL216ATのメーカーはSiemens Semiconductor Groupです、この部品の機能は「PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER」です。


製品の詳細 ( Datasheet PDF )

部品番号 IL216AT
部品説明 PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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IL216AT Datasheet, IL216AT PDF,ピン配置, 機能
IL215AT/216AT/217AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
High Current Transfer Ratio, IF=1 mA
IL215AT, 20% Minimum
IL216AT, 50% Minimum
IL217AT, 100% Minimum
Isolation Voltage, 2500 VACRMS
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL215AT/216AT/217AT is an optically coupled
pair with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL215AT/
216AT/217AT comes in a standard SOIC-8 small
outline package for surface mounting which makes
it ideally suited for high density applications with
limited space. In addition to eliminating through-
holes requirements, this package conforms to
standards for surface mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage ............................................ 6.0 V
Continuous Forward Current ............................... 60 mA
Power Dissipation at 25°C .................................. 90 mW
Derate Linearly from 25°C ............................ 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ..................... 30 V
Emitter-Collector Breakdown Voltage ....................... 7 V
Collector-Base Breakdown Voltage ........................ 70 V
Power Dissipation ............................................. 150 mW
Derate Linearly from 25°C ............................ 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ........................................... 280 mW
Derate Linearly from 25°C ............................ 3.3 mW/°C
Storage Temperature .......................... –55°C to +150°C
Operating Temperature ...................... –55°C to +100°C
Soldering Time at 260°C .................................... 10 sec.
Package Dimensions in Inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (TA=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
1.0
0.1
25
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
BVCEO 30
BVECO 7
Dark Current
Collector-Emitter
ICEOdark
5
Capacitance
Package
CCE
10
DC Current Transfer CTRDC
IL215AT
IL216AT
IL217AT
Collector-Emitter
Saturation Voltage
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
20 50
50 80
100 130
VCE sat
VIO 2500
CIO 0.5
RIO
tON, tOFF
100
3.0
Specifications subject to change.
Max. Unit
1.5 V
100 µA
pF
Condition
IF=1 mA
VR=6.0 V
VR=0
V
V
50 nA
pF
%
IC=10 µA
IE=10 µA
VCE=10 V,
IF =0
VCE=0
IF=1 mA
VCE=5 V
IC=0.1 mA,
0.4 IF=1 mA
VACRMS
pF
G
µs IC=2 mA,
RE=100 Ω,
VCE=10 V
Semiconductor Group
4–7
10.95

1 Page





IL216AT pdf, ピン配列
Figure 9. Normalized non-saturated and saturated
collector-emitter current versus LED current
100
Normalized to:
Ta = 25°C
10 Vce = 5 V
IF = 1 mA
Vce = 5 V
Vce = .4 V
1
.1
.01
.1
1 10
IF - LED Current - mA
100
Figure 11. Collector-base photocurrent versus
LED current
1000
100
Ta = 25°C
Vcb = 9.3 V
10
1
.1
.01
.1 1 10 100
IF - LED Current - mA
1000
Figure 13. Low to high propagation delay
versus LED current and load resistor
80
10K
60
40 4.7K
20 2K
0
0
Ta = 25°C, Vcc = 5 V, Vth = 1.5 V
5 10 15
IF - LED Current - mA
20
Figure 15. Typical switching characteristics
versus base resistance (saturated operation)
100
Input:
50
IF =10mA
Pulse width=100 mS
Duty cycle=50%
T OFF
10
5
TON
1.0
10K
50K 100K 500K 1M
Base-emitter resistance, RBE ()
Semiconductor Group
Figure 10. Normalized collector-base pho-
tocurrent versus LED current
100
Normalized to:
Ta = 25°C
10 Vce = 5 V
IF = 1 mA
1
.1
.01
.01
.1 1 10 100 1000
IF - LED Current - mA
Figure 12. High to low propagation delay versus
LED current and load resistor
20
10K
Ta = 25°C
Vcc = 5 V
15 4.7KVth = 1.5 V
10 2K
5
0
0 5 10 15
IF - LED Current - mA
20
Figure 14. Normalized non-saturated HFE
versus base current and temperature
1.2
70°C
Normalized to:
50°C
Ib = 20µA
1.0 25°C
Vce = 10 V
Ta = 25°C
0.8 -20°C
0.6
0.4
1
10 100
Ib - Base Current - µA
1000
Figure 16. Typical switching times
versus load resistance
1000
500
100
Input:
IF=10 mA
Pulse width=100 mS
Duty cycle=50%
T OFF
50
10
5 TON
1
0.1 0.5 1
5 10 50 100
Load resistance RL (K)
4–9


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共有リンク

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部品番号部品説明メーカ
IL216A

PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

Siemens Semiconductor Group
Siemens Semiconductor Group
IL216AT

PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

Siemens Semiconductor Group
Siemens Semiconductor Group


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