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IL213ATのメーカーはSiemens Semiconductor Groupです、この部品の機能は「PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER」です。 |
部品番号 | IL213AT |
| |
部品説明 | PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとIL213ATダウンロード(pdfファイル)リンクがあります。 Total 3 pages
IL211AT/IL212AT/IL213AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• High Current Transfer Ratio
IL211AT—20% Minimum
IL212AT—50% Minimum
IL213AT—100% Minimum
• Isolation Voltage, 2500 VACRMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL211AT/212AT/213AT are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT//212AT/
213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.
In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
IF=10 mA makes these optocouplers suitable for a
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25°C ............................. 90 mW
Derate Linearly from 25°C ....................... 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ................ 30 V
Emitter-Collector Breakdown Voltage .................. 7 V
Collector-Base Breakdown Voltage ................... 70 V
Power Dissipation ........................................ 150 mW
Derate Linearly from 25°C ....................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ...................................... 280 mW
Derate Linearly from 25°C ....................... 3.3 mW/°C
Storage Temperature ..................... –55°C to +150°C
Operating Temperature ................. –55°C to +100°C
Soldering Time at 260°C ............................... 10 sec.
Package Dimensions in Inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (TA=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
1.3
0.1
25
Breakdown Voltage BVCEO
BVECO
Collector-Emitter
30
7
Dark Current
Collector-Emitter
ICEOdark
5
Capacitance
Package
CCE
10
DC Current Transfer CTRDC
IL211AT
20 50
IL212AT
50 80
IL213AT
100 130
Collector-Emitter
Saturation Voltage VCE sat
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
VIO 2500
CIO 0.5
RIO
tON, tOFF
100
3.0
Specifications subject to change.
Max. Unit
1.5 V
100 µA
pF
V
V
50 nA
pF
%
Condition
IF=10 mA
VR=6.0 V
VR=0
IC=10 µA
IE=10 µA
VCE=10 V,
IF=0
VCE=0
IF=10 mA
VCE=5 V
0.4 IF=10 mA,
IC=2.0 mA
VACRMS
pF
GΩ
µs IC=2 mA,
RE=100 Ω,
VCE=10 V
Semiconductor Group
4–4
10.95
1 Page Figure 9. Typical switching characteristics
versus base resistance (saturated operation)
100
Input:
50
IF =10mA
Pulse width=100 mS
Duty cycle=50%
T OFF
10
5
TON
1.0
10K
50K 100K 500K 1M
Base-emitter resistance, RBE (Ω)
Figure 10. Typical switching times
versus load resistance
1000
500
100
Input:
IF=10 mA
Pulse width=100 mS
Duty cycle=50%
50
T OFF
10
5 TON
1
0.1 0.5 1
5 10 50 100
Load resistance RL (KΩ)
Semiconductor Group
4–6
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ IL213AT データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IL213A | PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER | Siemens Semiconductor Group |
IL213AT | PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER | Siemens Semiconductor Group |
IL213AT | (IL211AT / IL212AT / IL213AT) Optocoupler | Vishay |