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PDF IF4500 Data sheet ( Hoja de datos )
| Número de pieza | IF4500 | |
| Descripción | N-Channel Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET Corporation | |
| Logotipo |  |
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B-36
IF4500
N-Channel Silicon Junction Field-Effect Transistor
01/99
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
225 mW
1.8 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
V(BR)GSS
IGSS
VGS(OFF)
IDSS
IF4500
Min Max
Unit
Process NJ450L
Test Conditions
– 20 V IG = – 1 µA, VDS = ØV
– 0.1 nA VGS = – 30V, VDS = ØV
– 0.35 – 1.5 V
5 mA
VDS = 15V, ID = 0.5 nA
VDS = 15V, VGS = ØV
gfs
15
mS VDS = 15V, ID = 5 mA
f = 1 kHz
Ciss
35 pF VDS = 15V, VGS = ØV
f = 1 MHz
Crss
8 pF VDS = 15V, VGS = ØV
f = 1 MHz
Typ
e¯N 1.5 nV/√Hz VDS = 12V, VGS = ØV f = 1 kHz
TOÐ236AB Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Pin Configuration
1 Drain, 2 Source, 3 Gate
www.interfet.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet IF4500.PDF ] | |
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