|
|
PZTA28のメーカーはFairchild Semiconductorです、この部品の機能は「NPN Darlington Transistor」です。 |
部品番号 | PZTA28 |
| |
部品説明 | NPN Darlington Transistor | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとPZTA28ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Discrete POWER & Signal
Technologies
MPSA28
MMBTA28
PZTA28
C
BE
TO-92
C
SOT-23
Mark: 3SS
E
B
C
SOT-223
C
B
E
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from Process 03.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
VEBO
Emitter-Base Voltage
12
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
800
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA28
*MMBTA28
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
625 350
5.0 2.8
83.3
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
200
357
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA28
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
1 Page Typical Characteristics (continued)
NPN Darlington Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
2
β = 1000
1.6
- 40 ºC
1.2
25 °C
125 ºC
0.8
0.4
0
1 10 100 1000
I C - COLLECTOR CURRENT (mA)
Base Emitter ON Voltage vs
Collector Current
2
1.6
- 40 °C
25 °C
1.2
125 °C
0.8
0.4 VCE = 5V
0
1 10 100
I C - COLLECTOR CURRENT (mA)
P 03
1000
Collector-Cutoff Current
vs. Ambient Temperature
100
VCB = 80V
10
1
0.1
0.01
25
50 75 100
TA- AMBIENT TEMPERATURE (ºC)
P 03
125
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
114.2
114
113.8
113.6
113.4
113.2
113
112.8
0.1
1 10 100
RESISTANCE (kΩ)
1000
Input and Output Capacitance
vs Reverse Voltage
f = 1.0 MHz
20
15
10 C ib
5 Cob
2
0.1 1
10
Vce- COLLECTOR VOLTAGE(V)
100
Gain Bandwidth Product
vs Collector Current
40
Vce = 5V
30
20
10
0
1
10 20
50 100 150200
IC- COLLECTOR CURRENT (mA)
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ PZTA28 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
PZTA27 | NPN General Purpose Amplifier | Fairchild Semiconductor |
PZTA28 | NPN Darlington Transistor | Fairchild Semiconductor |