PDF PTF211802 Data sheet ( Hoja de datos )

Número de pieza	PTF211802
Descripción	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
Fabricantes	Infineon Technologies AG
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No Preview Available ! PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 2.0 A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 3.84 MHz BW 35 -30 30 -35 25 Gain Drain Efficiency IM3 20 -40 -45 • Broadband internal matching • Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc • Typical CW performance - Output power at P–1dB = 180 W - Efficiency = 50% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power 15 10 5 35 -50 ACPR 37 39 41 43 45 Output Power (dBm), Average -55 -60 47 PTF211802A Package 20275 PTF211802E Package 30275 ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, POUT = 38 W AVG f1 = 2140 MHz, f2 = 2150 MHz, two–carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol IM3 Gps ηD Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, POUT = 60 W PEP, f = 2110 MHz, tone spacing = 5 MHz Characteristic Symbol Gain Drain Efficiency Intermodulation Distortion Gps ηD IMD Min — — — Min 12.5 20 — Typ –37 15 25 Typ 15 22 –40 Max — — — Units dBc dB % Max — — –38 Units dB % dBc Data Sheet 1 2004-02-13 1 page PTF211802 Reference Circuit VDD C1 .01µF R3 QQ1 2KV C2 .01µF LM7805 C3 R2 1.3KV R1 1.2KV . 01µ F Q1 BCP56 RF_IN R4 R6 10V 1KV R5 R7 24KV 3KV C4 0.1 µF l13 C5 8.2pF R10 10 V l7 l9 l11 C6 l5 2 20pF DUT l1 l2 l3 l4 l6 l 8 l10 l12 C7 0.1pF C8 1.2pF C9 20pF R11 10 V l14 C10 C11 0.1µF 8.2pF VDD C12 C13 C14 l17 10pF 1µF 100µ F 50V l15 l19 l 21 l23 l26 l27 C16 C15 12pF 0.6pF l25 2 RF_OUT l16 l20 l18 l22 l24 C17 12pF C18 C19 10pF 1µF C20 VDD 100 µF 50V 211802_sch-e Reference Circuit Schematic for 2140 MHz Circuit Assembly Information DUT Circuit board PTF211802E ε0.76 mm [.030”] thick, r = 3.48 LDMOS transistor Rogers 4350, 2 oz. copper Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9, l10 l11, l12 l13, l14 l15, l16 l17, l18 l19, l20 l21, l22 l23, l24 l25 l26 l27 Electrical Characteristics at 2140 MHz 0.110 λ, 50.0 Ω 0.175 λ, 50.0 Ω 0.205 λ, 35.4 Ω 0.092 λ, 35.4 Ω 0.500 λ, 50.0 Ω 0.052 λ, 50.0 Ω 0.110 λ, 31.8 Ω 0.073 λ, 22.4 Ω 0.089 λ, 9.10 Ω 0.337 λ, 50.4 Ω 0.132 λ, 8.42 Ω 0.250 λ, 50.0 Ω 0.035 λ, 13.2 Ω 0.057 λ, 36.5 Ω 0.061 λ, 50.0 Ω 0.500 λ, 50.0 Ω 0.264 λ, 35.4 Ω 0.136 λ, 50.0 Ω Dimensions: L x W (mm.) 9.40 x 1.70 14.78 x 1.70 16.99 x 2.84 7.57 x 2.84 42.67 x 1.70 4.39 x 1.70 9.04 x 3.30 5.84 x 5.26 6.86 x 15.09 28.58 x 1.70 10.01 x 16.33 21.26 x 1.70 2.74 x 9.96 4.70 x 2.72 5.21 x 1.70 42.67 x 1.70 21.79 x 2.84 11.51 x 1.70 Dimensions: L x W (in.) 0.370 x 0.067 0.582 x 0.067 0.669 x 0.112 0.298 x 0.112 1.680 x 0.067 0.173 x 0.067 0.356 x 0.130 0.230 x 0.207 0.270 x 0.594 1.125 x 0.067 0.394 x 0.643 0.837 x 0.067 0.108 x 0.392 0.185 x 0.107 0.205 x 0.067 1.680 x 0.067 0.858 x 0.112 0.453 x 0.067 Data Sheet 5 2004-02-13 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
PTF211802	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz	Infineon Technologies AG
PTF211802A	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz	Infineon Technologies AG
PTF211802E	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz	Infineon Technologies AG

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